• Acta Photonica Sinica
  • Vol. 31, Issue 1, 93 (2002)
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. X-RAY DIFFRACTION ROCKING CURVE OF AlGaAs/GaAs EPITXIAL LAYER OF TRANSPARENT GaAs PHOTOCATHODE[J]. Acta Photonica Sinica, 2002, 31(1): 93 Copy Citation Text show less
    References

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    [2] Gilles Renaud.Oxide surface and metal/oxide interfaces studied by grazing incidence X-ray scattering.Surface Science Reports,1998,32:12~13

    [3] Fewster P F.X-ray diffraction from low dimensional structures.Semicond Sci Technol,1993,8:1921~1923

    [4] Shaw R.Image science.London :Academic Press Inc,1974:220~221

    [5] Fewster P F.High-resolution diffraction-space mapping and topography.Appl Phys,1994,A58(1):121~127

    [6] van der Sluis P.Determination of strain in epitaxial semiconductor structures by high-resolution X-ray diffraction.Appl Phys,1994,A58:129~134

    [7] Feng Zhechuan,Liu Hongdu.Generalized formula for curvature radius and lager stresses caused by thermal strain in semiconductor multilager structures.J Appl Phys,1983,54(1):83~85

    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. X-RAY DIFFRACTION ROCKING CURVE OF AlGaAs/GaAs EPITXIAL LAYER OF TRANSPARENT GaAs PHOTOCATHODE[J]. Acta Photonica Sinica, 2002, 31(1): 93
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