Su-Jie Wang, Shu-Qiang Li, Xiao-Ming Wu, Fang Chen, Feng-Yi Jiang. Study on the effect of thermal annealing process on ohmic contact performance of AuGeNi/n-AlGaInP [J]. Acta Physica Sinica, 2020, 69(4): 048103-1
- Acta Physica Sinica
- Vol. 69, Issue 4, 048103-1 (2020)
Fig. 1. Schematic diagrams of AlGaInP-base LED epitaxial structure.
Fig. 2. Schematic diagrams of (a) conventional n-side-up AlGaInP LED structure and (b) n-AlGaInP contact LED.
Fig. 3. I -V behaviors of Sample D5, ring intervals are 10−35 µm
Fig. 4. I -V behaviors of Sample A1, B1, C1 and D1 after annealing at 385 ℃ for 25 s.
Fig. 5. Contact resistivity as a function of doping concentration for different annealing conditions.
Fig. 6. SIMS depth profiles of Ni/Au/Ge/Ni/Au contact on n-(Al0.27Ga0.73)0.5In0.5P before annealing and after annealing.
Fig. 7. At the same N D (a) ρ c as a function of annealing temperature when the annealing time is 25 s; (b) ρ c as a function of annealing temperature when the annealing temperature is 445 ℃.
Fig. 8. SEM micrographs showing the surface morphologies of ohmic contact (a) 445 ℃ for 25 s (b) 485 ℃ for 25 s.
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Table 1. Grouping information of samples annealing and specific contact resistivity (ρc) results.
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