[1] M. A. Capano, S. D. Walk, P. Τ. Murray et al.. Pluse laser deposition of silicon carbon at room temperature[J]. Appl. Phys. Lett., 1994, 64:3413-3415

[2] F. Neri, S. Trusso, C. Vasi et al.. Raman microscopy study of plused laser ablation deposited silicon carbide films[J]. Thin Solid Films, 1998, 332:290-294

[3] J. C. Burton, L Sun, M. Pophristic et al.. Spatial characterization of doped SiC waters by Raman spectroscopy[J]. J. Appl. Phys., 1998, 84(11): 6268-6273

[4] S. Trusso, C. Vasi, F. Barreca et al.. Micro-Raman study of reactive pulsed laser ablation deposited silicon carbon alloy films[J]. J. Vac. Sci. Technol. A, 1998, 16(5):3020-3024

[5] L Rimai, R Ager, Ε. M. Logothetis et al.. Preparation of oriented silicon carbide films by laser ablation of ceramic silicon carbide targets[J]. Appl. Phys. Lett., 1991, 59(18): 2266-2268

[6] W. Κ Choi, Υ. M. Chan, C. Η Ling et al.. Structural properties of amorphous silicon carbide films by plasma enhanced chemical vapor deposiUon[J]. J. Appl. Phys., 1995, 77(2):827-832

[7] Y. Yan, F. M. Huang, S. L. Zhang et al.. Optical phonon Raman spectroscopy in SiC nanorod[J]. Chinese J. Semicondutors, 2001, 22(6):726-728