X-RAY DIFFRACTION ANALYSIS ON THE Al CONTENT OF THE AlGaAs BUFFER LAYER IN THE TRANSPARENT GaAs PHOTOCATHODE

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Photonica Sinica >Volume 31 >Issue 4 >Page 454 > Article

Acta Photonica Sinica
Vol. 31, Issue 4, 454 (2002)

X-RAY DIFFRACTION ANALYSIS ON THE Al CONTENT OF THE AlGaAs BUFFER LAYER IN THE TRANSPARENT GaAs PHOTOCATHODE

[in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. X-RAY DIFFRACTION ANALYSIS ON THE Al CONTENT OF THE AlGaAs BUFFER LAYER IN THE TRANSPARENT GaAs PHOTOCATHODE[J]. Acta Photonica Sinica, 2002, 31(4): 454 Copy Citation Text

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References

[1] Manasevit H M.Single-crystal gallium arseine on insulating substrates.Appl Phys Lett,1968,12(4):156～157

[2] Fewster P F.A high-resolution mutiple-crytstal multiple-reflection diffractometer.J Appl Gryst,1982,22(1):64～69

[3] Fewster P F.X-ray diffraction from low dimensional structures.Semicond Sci Technol,1993,8(10):1915～1934

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