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Journals >Acta Physica Sinica >Volume 68 >Issue 7 >Page 078101-1 > Article

Acta Physica Sinica
Vol. 68, Issue 7, 078101-1 (2019)

Formation of step bunching on 4H-SiC (0001) surfaces based on kinetic Monte Carlo method

Yuan Li^1、*, Ai-Hong Shi², Guo-Yu Chen¹, and Bing-Dong Gu¹

Author Affiliations

¹School of Transportation, Qinghai Nationalities University, Xining 810007, China

²School of Chemistry and Chemical Engineering, Qinghai Nationalities University, Xining 810007, China

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DOI: 10.7498/aps.68.20182067 Cite this Article

Yuan Li, Ai-Hong Shi, Guo-Yu Chen, Bing-Dong Gu. Formation of step bunching on 4H-SiC (0001) surfaces based on kinetic Monte Carlo method[J]. Acta Physica Sinica, 2019, 68(7): 078101-1 Copy Citation Text

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References

[1] Kimoto T[J]. Prog. Cryst. Growth Charact. Mater., 62, 329(2016).

[2] Tsunenobu K[J]. Jpn. J. Appl. Phys., 54, 040103(2015).

[3] Tang C, Ji L, Meng L J, Sun L Z, Zhang K W, Zhong J X[J]. Acta Phys. Sin., 58, 7815(2009).

[4] Feng Q, Hao Y, Zhang X J, Liu Y L[J]. Acta Phys. Sin., 53, 626(2004).

[5] Yang H H, Gao F, Dai M J, Hu P A[J]. Acta Phys. Sin., 66, 216804(2017).

[6] La V F, Severino A, Anzalone R, Bongiorno C, Litrico G, Mauceri M, Schoeler M, Schuh P, Wellmann P[J]. Mater. Sci. Semicond. Process., 78, 57(2018).

[7] Müller S G, Sanchez E K, Hansen D M, Drachev R D, Chung G, Thomas B, Zhang J, Loboda M J, Dudley M, Wang H, Wu F, Byrappa S, Raghothamachar B, Choi G[J]. J. Cryst. Growth, 352, 39(2012).

[8] Tomoki Y, Ohtomo K, Sato S, Ohtani N, Katsuno M, Fujimoto T, Sato S, Tsuge H, Yano T[J]. J. Cryst. Growth, 431, 24(2015).

[9] Schwoebel R L[J]. J. Appl. Phys., 40, 614(1969).

[10] Kimoto T, Itoh A, Matsunami H, Okano T[J]. J. Appl. Phys., 81, 3494(1997).

[11] Kimoto T, Itoh A, Matsunami H[J]. Appl. Phys. Lett., 66, 3645(1995).

[12] Ohtani N, Katsuno M, Aigo T, Fujimoto T, Tsuge H, Yashiro H, Kanaya M[J]. J. Cryst. Growth, 210, 613(2000).

[13] Heuell P, Kulakov M A, Bullemer B[J]. Surf. Sci., 331-333, 965(1995).

[14] Borovikov V, Zangwill A[J]. Phys. Rev. B, 79, 245413(2009).

[15] Krzyżewski F[J]. J. Cryst. Growth, 401, 511(2014).

[16] Xie M H, Leung S Y, Tong S Y[J]. Surf. Sci., 515, L459(2002).

[17] Krzyżewski F, Załuska–Kotur M A[J]. J. Appl. Phys., 115, 213517(2014).

[18] Li Y, Chen X J, Su J[J]. Appl. Surf. Sci., 371, 242(2016).

[19] Battaile C C[J]. Comput. Methods Appl. Mech. Engrg., 197, 3386(2008).

[20] Chien F R, Nutt S R, Yoo W S, Kimoto T, Matsunami H[J]. J. Mater. Res., 9, 940(1994).

[21] Heine V, Cheng C, Needs R J[J]. J. Am. Ceram. Soc., 74, 2630(1991).

[22] Li Y, Chen X, Su J[J]. J. Cryst. Growth, 468, 28(2017).

[23] Camarda M, La Magna A, La Via F[J]. J. Comput. Phys., 227, 1075(2007).

[24] Ohtani N, Katsuno M, Takahashi J, Yashiro H, Kanaya M[J]. Phys. Rev. B, 59, 4592(1999).

[25] Sato M[J]. Phys. Rev. E, 97, 062801(2018).

[26] Ranguelov B, Müller P, Metois J J, Stoyanov S[J]. J. Cryst. Growth, 457, 184(2017).

[27] Markov I V 2003 Crystal Growth for Beginners: Fundamentals of Nucleation, Crystal Growth and Epitaxy (London: World Scientific)

[28] Vasiliauskas R, Marinova M, Hens P, Wellmann P, Syväjärvi , Yakimova R[J]. Cryst. Growth Des., 12, 197(2012).

[29] Mochizuki K[J]. Appl. Phys. Lett., 93, 222108(2008).

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Yuan Li, Ai-Hong Shi, Guo-Yu Chen, Bing-Dong Gu. Formation of step bunching on 4H-SiC (0001) surfaces based on kinetic Monte Carlo method[J]. Acta Physica Sinica, 2019, 68(7): 078101-1

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