[1] SMIT M, LEIJTENS X, AMBROSIUS H, et al. An introduction to InP-basedgeneric integration technology[J]. Semiconductor Science and Technology, 2014, 29(8): 083001.
[2] SAITO T, TAKIGUCHI T, TAKAGI K, et al. Tunable DFB laser array integrated with Mach-Zehnder modulators for 44.6 Gbps DQPSK transmitter[J].IEEE Journal of Selected Topics in Quantum Electronics, 2013, 19(4): 1501507.
[3] LANGE S, GRUNER M, MEUER C, et al. Low switching voltage Mach-Zehndermodulator monolithically integrated with DFB Laser for data transmission up to 107.4 Gb/s[J]. Journal of Lightwave Technology, 2016, 34(2): 401-406.
[4] MESTRE M A, MARDOYAN H, CAILLAUD C, et al. Compact InP-based DFB-EAM enabling PAM-4 112 Gb/s transmission over 2 km[J]. Journal of Lightwave Technology, 2016, 34(7): 1572-1578.
[5] FOX A M, MILLER D A B, LIVESCU G, et al. Quantum well carrier sweep out: Relation to electro absorption and excition saturation[J].IEEE Journal of Quantum Electronics, 1991, 27(10): 2281-2295.
[6] WU B B,CHENG Y B, FU S N, et al. Investigation of InGaAsP quantum-well EAM based pump-probe configuration for ultrafast optical signal processing[J]. IEEE Journal of Quantum Electronics, 2011, 47(8): 1113-1122.
[9] TU X, LIOW T Y, SONG J, et al. 50-Gb/s silicon optical modulator with traveling-wave electrodes[J]. Optics Express, 2013, 21(10): 12776-12782.
[10] FUSTE I, ANTONIOJ. Design rules and optimization of electro-optic modulators based on coplanar waveguides[D]. Barcelona: UPC-Barcelona Tech, 2013: 9-22.
[11] ZHOU Y, ZHOU L, SUN X, et al. Design of traveling wave electrode for high-speed silicon modulators[C]. Asia Communications and Photonics Conference, 2012: AS3B.2.
[12] DONG P. Travelling-wave Mach-Zehnder modulators functioning as optical isolators[J]. Optics Express, 2015, 23(8): 10498-10505.
[13] PROSYK K, AITOUALI A, BORNHOLDT C, et al. High performance 40GHz InP Mach-Zehnder modulator[C]. IEEE Optical Fiber Communication Conference & Exposition,2012:OW4F.7.
[14] CHEN H. Development of an 80 Gbit/s InP-based Mach-Zehnder modulator[D]. Berlin: Technischen University, 2007: 95-119.
[15] CAI Chun, LIU Xu, XIAO Jin-biao, et al. Direct analysis in time domain method for TW electrode on InP/InGaAsP-EAM [J]. Chinese Journal of Quantum Electronics, 2006, 23(6): 881-885.
[16] TSUZUKI K, ISHIBASHI T, ITO T, et al. 40 Gbit/s n-i-n InP Mach-Zehnder modulator with a π voltage of 2.2V[J]. Electronics Letters, 2003, 39(20): 1464-1466.
[18] HUNTOON N R, CHRISTENSEN M P, MACFARLANE D L, et al. Integrated photonic coupler based on frustrated total internal reflection[J]. Applied Optics, 2008, 47(30): 5682-5690.
[19] LIU Ke, MU Si-xuan, HUANG Hui, et al. Design and simulation of silicon-based rectangular Mach-Zehnder thermo-optical switch[J].Acta Photonica Sinica, 2014, 43(2): 0213001.
[20] MU S, LIU K, WANG S, et al. Compact InGaAsP/InP 3×3 multimode interference coupler-based electro-optic switch[J]. Applied Optics, 2016, 55(7): 1795-1802.
[21] LEWEN R, IRMSCHER S, ERIKSSON U. Microwave CAD circuit modeling of a traveling-wave electro absorption modulator[J]. IEEE Transactions on Microwave Theory & Techniques, 2003, 51(4): 1117-1128.
[22] DING R, LIU Y, LI Q, et al. Design and characterization of a 30-GHz bandwidth low-power silicon traveling-wave modulator[J]. Optics Communications, 2014, 321(12): 124-133.
[23] LIU J M. Photonic Devices[M].New York: Cambridge University Press, 2005:237-288.
[25] POZAR D M. Microwave Engineering[M]. New York: John Wiley & Sons, 1998: 165-225.
[26] KIKUCHI N. InP Mach-zehnder modulators for advanced modulation formats[C]. Integrated Photonics and Nanophotonics Research and Applications, 2008: IMA4.