• Acta Photonica Sinica
  • Vol. 38, Issue 12, 3121 (2009)
[in Chinese], [in Chinese]*, [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Preparation and Characterization of ZnO-SnO2 Transparent and Conducting Thin Film[J]. Acta Photonica Sinica, 2009, 38(12): 3121 Copy Citation Text show less

    Abstract

    Transparent and conducting polycrystalline oxide thin films of ZnO-SnO2 are prepared on glass subsrate by the process of gelatination in two-step.The crystalline structure of the thin film, surface morphology, optical transmittance and conductivity are characterized by X-ray diffraction(XRD), Atomic force microscope(AFM), Spectrophotometeric analysis(UV-Vis),device of film analysis and Four-point probes, respectively.The results indicate that the transparent conducting thin film with Zn/Sn=9/12 has the optimal performance at the annealing tempareture of 500 ℃ and the ultraviolet-visible light transmittance reached 90% with 3.15×10-3 Ω·cm resistance.Compared with other methods,transparent and conducting thin films of ZnO-SnO2 prepared by gelatination in two-step has excellent characteristics.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Preparation and Characterization of ZnO-SnO2 Transparent and Conducting Thin Film[J]. Acta Photonica Sinica, 2009, 38(12): 3121
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