• Journal of Terahertz Science and Electronic Information Technology
  • Vol. 20, Issue 9, 922 (2022)
MA Maodan1、2、*, CAO Yanrong1、2, LYU Hanghang1、2, WANG Zhiheng1、2, REN Chen1、2, ZHANG Longtao1、2, LYU Ling3, ZHENG Xuefeng3, and MA Xiaohua3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.11805/tkyda2022010 Cite this Article
    MA Maodan, CAO Yanrong, LYU Hanghang, WANG Zhiheng, REN Chen, ZHANG Longtao, LYU Ling, ZHENG Xuefeng, MA Xiaohua. Simulation of proton radiation effect in HEMT devices[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(9): 922 Copy Citation Text show less
    References

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    [2] KHAN M A,KUZNIA J N,OLSON D T,et al. Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor[J]. Applied Physics Letters, 1994,65(9):1121-1123.

    [3] ANDERSON T J, KOEHLER A, GREENLEE J, et al. Substrate-dependent effects on the response of AlGaN/GaN HEMTs to 2 MeV proton irradiation[J]. IEEE Electron Device Letters, 2014,35(8):826-828.

    [4] HUANG Bencheng,TONG Jingyu. Space environment engineering[M]. Beijing:Press of Technology of Science and Technology of China, 2010.

    [5] ZHANG Minglan, YANG Ruixia, LI Zhuoxin, et al. Study on proton irradiation induced defects in GaN thick film[J]. Acta Electronica Sinica, 2013,62(11):117103-117109.

    [6] RESHCHIKOV M A,MORKOC H. Luminescence properties of defects in GaN[J]. Journal of Applied Physics, 2005,97(6): 061301-1-95.

    [7] MANASREH M O,WEAVER B D. Local vibrational modes of carbon-hydrogen complexes in proton irradiated AlGaN[J]. MRS Online Proceedings Library, 2001(692):H911.

    [8] XIAO H Y, GAO F, ZU X T, et al. Threshold displacement energy in GaN: Ab initio molecular dynamics study[J]. Journal of Applied Physics, 2009,105(12):334-338.

    [9] ZIEGLER J F. The stopping and range of ions in matter[J]. Springer US, 2012(268):1818-1823.

    [10] QADR H M,HAMAD A M. Using of stopping and range of ions in matter code to study of radiation damage in materials[J]. Solid State Physics, 2020,12(4):451-456.

    [11] LYU Ling,LIN Zhengzhao,GUO Hongxia,et al,. Effect of proton irradiation on ehancement-mode AlGaN/GaN MIS-HEMTS[J]. Modern Applied Physics, 2021,12(2):1-7.

    [12] YAN Xiaoyao. The study of radiation traps in AlGaN/GaN HEMTs[D]. Xi’an,China:Xidian University, 2020.

    [13] XI Yuyin,HSIEH Y L,HWING Y H,et al. Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors[J]. Journal of Vacuum Science & Technology B, 2013,32(1):012101-012102.

    [14] LYU Ling. Study of radiation effects of GaN-based semiconductor materials and HEMTs[D]. Xi’an,China:Xidian University, 2014.

    [15] GU Wenping,CHEN Chi,DUAN Huantao,et al. 60Co γ-rays irradiation effect in DC performance of AlGaN/GaN high electron mobility transistors[J]. Journal of Semiconductors, 2009,30(4):25-29.

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    MA Maodan, CAO Yanrong, LYU Hanghang, WANG Zhiheng, REN Chen, ZHANG Longtao, LYU Ling, ZHENG Xuefeng, MA Xiaohua. Simulation of proton radiation effect in HEMT devices[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(9): 922
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