• Acta Photonica Sinica
  • Vol. 39, Issue 10, 1738 (2010)
CHEN Zhen-yu, LIANG Rui-sheng*, HUANG Shu-liang, LIAO Hao-xiang, and MA Zhi-jian
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  • [in Chinese]
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    DOI: Cite this Article
    CHEN Zhen-yu, LIANG Rui-sheng, HUANG Shu-liang, LIAO Hao-xiang, MA Zhi-jian. Electron Ultrafast Relaxation Process in Semiconductor Nanoparticles[J]. Acta Photonica Sinica, 2010, 39(10): 1738 Copy Citation Text show less

    Abstract

    To study the dynamic process excited by femtsecond laser,a carrier model with three energy level and trap is constructed,with which the electron rate equation is obtained.The numerical simulation is used to calculate the electron number change of each energy level and the differentiated absorbtion rate as the time goes by.With the change of the electron’s absorption cross-section,differentiated absorbtion rate will have a ultrafast change process.Compared with the experimental result of Fanxin Wu,the differentiated absorbtion rate curves are basically the same,which shows the model have some rationality.
    CHEN Zhen-yu, LIANG Rui-sheng, HUANG Shu-liang, LIAO Hao-xiang, MA Zhi-jian. Electron Ultrafast Relaxation Process in Semiconductor Nanoparticles[J]. Acta Photonica Sinica, 2010, 39(10): 1738
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