• Chinese Journal of Lasers
  • Vol. 24, Issue 10, 873 (1997)
[in Chinese]1、2, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, and [in Chinese]2
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  • 1[in Chinese]
  • 2[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 980 nm InGaAs Strained Quantum Well Lasers and Modules[J]. Chinese Journal of Lasers, 1997, 24(10): 873 Copy Citation Text show less
    References

    [1] H. K. Choi, C. A. Wang. InGaAs/A1GaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency. Appl. Phys. Lett., 1990, 57(4): 321~323

    [2] J. P. Van der Ziel, N. Chand. High-temperature operation 980 nm strained single quantum well In0.2Ga0.8As/GaAs lasers. Appl. Phys. Lett., 1991, 58(13): 1435~1439

    [3] M. Yamada, M. Shimizu, T. Takeshita et al.. Er3+-doped fiber optical amplifier pumped by 980 nm laser diodes. IEEE Photon. Technol. Lett., 1989, 1(3): 422~424

    [4] Makoto Yamada, Makoto Shimizu, Masanobu Okayasu et al.. Noise cl aracteristics of Er3+-doped fiber amplifiers pumped by 980 nm and 1480 nm laser diodes. IEEE Photon. Technol. Lett., 1990, 2(2): 205~206

    [5] E. Desurvirs, M. Sagawa, K. Hirmoto et al.. High reliable operation of strained compensated 980 nm InGaAs/InCaP/GaAs lasers with InGaAsP strained barriers for EDFAs. Electron. Lett., 1995, 31(3):198~199

    [6] Robert M. Kolhas, Neal G. Anderson, W. D. Laidig et al.. Strained-layer InGaAs-GaAS-AlGaAs photopumped and current injection lasers. IEEE. J. Quant. Electron., 1988, QE-24(8): 1605~1613

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 980 nm InGaAs Strained Quantum Well Lasers and Modules[J]. Chinese Journal of Lasers, 1997, 24(10): 873
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