Simulation study of the NAσ&#39;s dependence of DOF for 193-nm immersion lithography at 65-nm node

Guosheng Huang; Yanqiu Li

Journals >Chinese Optics Letters >Volume 3 >Issue 2 >Page 0273 > Article

Chinese Optics Letters
Vol. 3, Issue 2, 0273 (2005)

Simulation study of the NAσ's dependence of DOF for 193-nm immersion lithography at 65-nm node

Guosheng Huang^1、2 and Yanqiu Li^1、*

Author Affiliations

¹The Institute of Electrical Engineering of Chinese Academy of Sciences, Beijing 100080

²Graduate School of Chinese Academy of Sciences, Beijing 100039

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Guosheng Huang, Yanqiu Li. Simulation study of the NAσ's dependence of DOF for 193-nm immersion lithography at 65-nm node[J]. Chinese Optics Letters, 2005, 3(2): 0273 Copy Citation Text

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References

[1] S. Owa and H. Nagasaka, Journal of Microlithography, Microfabrication, and Microsystems 3, 97 (2004).

[2] J. Mulkens, D. Flagello, B. Streefkerk, and P. Grapner, Journal of Microlithography, Microfabrication, and Microsystems 3, 104 (2004).

[3] C. A. Mack, Inside PROLITH^(TM), A Comprehensive Guide to Optical Lithography Simulation (FINLE Technologies, Inc., Austin, Texas, USA, 1997).

[4] S. D. Hsu, N. Corcoran, M. Eurlings, W. Knose, T. Laidig, K. E. Wampler, S. Roy, X. Shi, M. Hsu, J. Fungchen, J. Finders, R. J. Socha, and M. Dusa, Proc. SPIE 4691, 476 (2002).

CLP Journals

[1] Zhou Yuan, Li Yanqiu. Optimization of Double Bottom Antireflective Coating for Hyper Numerical Aperture Lithography[J]. Acta Optica Sinica, 2008, 28(3): 472

Guosheng Huang, Yanqiu Li. Simulation study of the NAσ's dependence of DOF for 193-nm immersion lithography at 65-nm node[J]. Chinese Optics Letters, 2005, 3(2): 0273

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