• Optics and Precision Engineering
  • Vol. 32, Issue 9, 1360 (2024)
Jian QIAO1,3, Zhenduo WU1, Xinhan PENG2, Yuxuan RAN1, and Jingwei YANG1,*
Author Affiliations
  • 1Guangdong Provincial Key Laboratory of Industrial Intelligent Inspection Technology, Foshan University,Foshan528000,China
  • 2Shenzhen Hymson Laser Intelligent Equipments Co.,Ltd., Shenzhen518000, China
  • 3Ji Hua Laboratory, Foshan528200, China
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    DOI: 10.37188/OPE.20243209.1360 Cite this Article
    Jian QIAO, Zhenduo WU, Xinhan PENG, Yuxuan RAN, Jingwei YANG. Mechanism for laser-induced damage bad chip of Micro-LED and optimization of processing parameters[J]. Optics and Precision Engineering, 2024, 32(9): 1360 Copy Citation Text show less
    Material structure of GAN-based Micro-LED sample
    Fig. 1. Material structure of GAN-based Micro-LED sample
    Schematic diagram of femtosecond laser processing system
    Fig. 2. Schematic diagram of femtosecond laser processing system
    Schematic diagram of two scan paths
    Fig. 3. Schematic diagram of two scan paths
    Squared diameters of ablated regions correlated with applied laser fluence
    Fig. 4. Squared diameters of ablated regions correlated with applied laser fluence
    Simulation results of vaporization temperature
    Fig. 5. Simulation results of vaporization temperature
    Simulation results of monopulse laser ablation
    Fig. 6. Simulation results of monopulse laser ablation
    Results of experimental and simulation ablated depth
    Fig. 7. Results of experimental and simulation ablated depth
    Comparison of surface topography of two scanning paths
    Fig. 8. Comparison of surface topography of two scanning paths
    Surface morphology of chip ablated under different laser spot spacing
    Fig. 9. Surface morphology of chip ablated under different laser spot spacing
    Surface roughness of chip under different spacings
    Fig. 10. Surface roughness of chip under different spacings
    Results of experimental and simulated ablative depth
    Fig. 11. Results of experimental and simulated ablative depth
    Three-dimensional morphology after removing chip
    Fig. 12. Three-dimensional morphology after removing chip
    ParameterValue
    Wavelength/nm355
    Power/W<10
    Pulse width/fs300
    Frequency/kHz250~5 000
    Optical quality/M21.3
    Spot roundness0.957
    Table 1. Main technical parameters of laser processing
    Sample No.Fluence/(J·cm-2Predicted ablation depth/μmScan timesProcessing time/s
    11.320.60101.36
    21.510.6791.21
    31.930.7581.06
    42.520.8670.91
    Table 2. Experimental parameters of laser-induced damage bad chip
    Jian QIAO, Zhenduo WU, Xinhan PENG, Yuxuan RAN, Jingwei YANG. Mechanism for laser-induced damage bad chip of Micro-LED and optimization of processing parameters[J]. Optics and Precision Engineering, 2024, 32(9): 1360
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