GaAlAs/GaAs Single Quantum Well Array Semiconductor Lasers

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 27 >Issue 12 >Page 1072 > Article

Chinese Journal of Lasers
Vol. 27, Issue 12, 1072 (2000)

GaAlAs/GaAs Single Quantum Well Array Semiconductor Lasers

[in Chinese]¹, [in Chinese]², [in Chinese]², [in Chinese]², [in Chinese]², and [in Chinese]¹

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. GaAlAs/GaAs Single Quantum Well Array Semiconductor Lasers[J]. Chinese Journal of Lasers, 2000, 27(12): 1072 Copy Citation Text

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Abstract

In this paper,the factors influencing the ultimate output power of laser diodes are analyzed.The GaAlAs/GaAs material with gradient refraction index,separate confinement single quantum well structure has been grown by MBE.The CW output power of the array diode laser is 10 W.The peak wavelength is 806～809 nm.

Keywords

array MBE quantum well semiconductor lasers

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. GaAlAs/GaAs Single Quantum Well Array Semiconductor Lasers[J]. Chinese Journal of Lasers, 2000, 27(12): 1072

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