• INFRARED
  • Vol. 41, Issue 5, 13 (2020)
Zhen TAN, Chun-ling LI, Hai-yan SUN, Min ZHANG, and Cheng-gang WANG
Author Affiliations
  • [in Chinese]
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    DOI: 10.3969/j.issn.1672-8785.2020.05.002 Cite this Article
    TAN Zhen, LI Chun-ling, SUN Hai-yan, ZHANG Min, WANG Cheng-gang. Study on Low Resistance Ohmic Contact Technology of GaAs/AlGaAs Quantum Well Infrared Detectors[J]. INFRARED, 2020, 41(5): 13 Copy Citation Text show less
    References

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    [2] Abhilash T S, Kumar C R, Rajaram G. Influence of Nickel Layer Thickness on the Magnetic Prope- rties and Contact Resistance of AuGe/Ni/Au Ohmic Contacts to GaAs/AlGaAs Heterostructures[J]. Physics D: Applied Physics, 2009, 42(12): 125104.

    [3] Miah M I. Low-temperature Annealed Ohmic Contacts to Si-doped GaAs and Contact Formation Mechanisms[J]. Materials Chemistry and Physics, 2009, 113(2): 967970.

    [4] Erofeev E, Kagadei V. Formation of Ge/Cu Ohmic Contacts to n-GaAs with Atomic Hydrogen Pre-annealing Step[C]. SPIE, 2010, 7521: 75210K.

    TAN Zhen, LI Chun-ling, SUN Hai-yan, ZHANG Min, WANG Cheng-gang. Study on Low Resistance Ohmic Contact Technology of GaAs/AlGaAs Quantum Well Infrared Detectors[J]. INFRARED, 2020, 41(5): 13
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