Study of the Frequency Stabilization of InGaAsP Semiconductor Laser Using the Optogalvanic Effect of a Gas Absorption Cell

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 25 >Issue 1 >Page 37 > Article

Chinese Journal of Lasers
Vol. 25, Issue 1, 37 (1998)

Study of the Frequency Stabilization of InGaAsP Semiconductor Laser Using the Optogalvanic Effect of a Gas Absorption Cell

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, and [in Chinese]²

Author Affiliations

¹[in Chinese]

²Department of Electrical Engineering, University of Delaware, Newark USA

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study of the Frequency Stabilization of InGaAsP Semiconductor Laser Using the Optogalvanic Effect of a Gas Absorption Cell[J]. Chinese Journal of Lasers, 1998, 25(1): 37 Copy Citation Text

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Abstract

The preliminary result of the frequency stabilization of an InGaAsP semiconductor laser using the optogalvanic effect of a gas absorption cell is reported. The optogalvanic signal of the discharge absorption cell is used as a frequency standard.

Keywords

discharge absorption cell frequency stabilization optogalvanic effect InGaAsP semiconductor laser

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