Temperature dependent characteristics of Ni/Au vertical Schottky diode based on mechanically exfoliated beta-Ga2O3 single crystal

Ze Long; Xiao-Chuan Xia; Jian-Jun Shi; Jun Liu; Xin-Lei Geng; He-Zhi Zhang; Hong-Wei Liang

doi:10.7498/aps.69.20200424

[1] Guo D Y, Li P G, Chen Z W, Wu Z P, Tang W H[J]. Acta Phys. Sin., 68, 078501(2019).

[2] Montes J, Yang C, Fu H, Yang T H, Fu K, Chen H, Zhou J, Huang X, Zhao Y[J]. Appl. Phys. Lett., 114, 162103(2019).

[3] Barman S K, Huda M N[J]. Phys. Status Solidi-R., 13, 1800554(2019).

[4] Qian L X, Wang Y, Wu Z H, Sheng T, Liu X Z[J]. Vacuum, 140, 106(2017).

[5] Wang X, Liu Z, Zhi Y, Li S, Wu Z, Li P, Tang W[J]. Vacuum, 166, 79(2019).

[6] Manandhar S, Battu A K, Devaraj A, Shutthanandan V, Thevuthasan S, Ramana C V[J]. Sci. Rep., 10, 178(2020).

[7] Yang J, Ren F, Tadjer M, Pearton S, Kuramata A[J]. ECS J. Solid State Sc., 7, Q92(2018).

[8] Galazka Z, Irmscher K, Schewski R, Hanke I M, Pietsch M, Ganschow S, Klimm D, Dittmar A, Fiedler A, Schroeder T, Bickermann M[J]. J. Cryst. Growth, 529, 125297(2020).

[9] Tang H L, He N T, Zhang H, Liu B, Zhu Z C, Xu M X, Chen L, Liu J L, Ouyang X P, Xu J[J]. Crystengcomm, 22, 924(2020).

[10] Matsuzaki K, Hiramatsu H, Nomura K, Yanagi H, Kamiya T, Hirano M, Hosono H[J]. Thin Solid Films, 496, 37(2006).

[11] Wang D, He L N, Le Y, Feng X J, Luan C N, Xiao H D, Ma J[J]. Ceram. Int., 46, 4568(2020).

[12] Matsuzaki K, Yanagi H, Kamiya T, Hiramatsu H, Nomura K, Hirano M, Hosono H[J]. Appl. Phys. Lett., 88, 92106(2006).

[13] Orita M, Ohta H, Hirano M, Hosono H[J]. Appl. Phys. Lett., 77, 4166(2000).

[14] Konishi K, Goto K, Murakami H, Kumagai Y, Higashiwaki M[J]. Appl. Phys. Lett., 110, 103506(2017).

[15] Pearton S J, Ren F, Tadjer M, Kim J[J]. J. Appl. Phys., 124, 220901(2018).

[16] Yao Y, Gangireddy R, Kim J, Das K K, Porter L M[J]. J. Vac. Sci. Technol., B, 35, 03D113(2017).

[17] Cheung S K, Cheung N W[J]. Appl. Phys. Lett., 49, 85(1986).

[18] Norde H[J]. J. Appl. Phys., 50, 5052(1979).

[19] He Q, Mu W, Dong H, Long S, Jia Z, Lv H, Liu Q, Tang M, Tao X, Liu M[J]. Appl. Phys. Lett., 110, 093503(2017).

[20] Ahn S, Ren F, Yuan L, Pearton S J, Kuramata A[J]. ECS J. Solid State Sc., 6, P68(2017).

[21] Jian G, He Q, Mu W, Fu B, Dong H, Qin Y, Zhang Y, Xue H, Long S, Jia Z, Lv H, Liu Q, Tao X, Liu M[J]. AIP Adv., 8, 015316(2018).

[22] Fares C, Ren F, Pearton S J[J]. ECS J. Solid State Sc., 8, Q3007(2018).

[23] Reddy P R S, Janardhanam V, Shim K H, Reddy V R, Lee S N, Park S J, Choi C J[J]. Vacuum, 171, 109012(2020).

[24] Sze S M, , Zhang R[J]. Physics of Semiconductor Devices 3rd Ed., 118-119(2008).

[25] Shi J J, Xia X C, Liang H W, Abbas Q, Liu J, Zhang H Q, Liu Y[J]. J. Mater. Sci.-Mater. Electron., 30, 3860(2019).

[26] Ohdomari I, Tu K N[J]. J. Appl. Phys., 51, 3735(1980).

[27] Tung R T[J]. Phys. Rev. B, 45, 13509(1992).

[28] Güçlü Ç Ş, Özdemir A F, Altindal Ş[J]. Appl. Phys. A, 122, 1032.1(2016).

[29] Marıl E, Altındal Ş, Kaya A, Koçyiğit S, Uslu İ[J]. Philos. Mag., 95, 1049(2015).

[30] Garrido-Alzar C L[J]. Renewable Energy, 10, 4(1997).

[31] Janardhanam V, Jyothi I, Sekhar Reddy P R, Cho J, Cho J M, Choi C J, Lee S N, Rajagopal Reddy V[J]. Superlattices Microstruct., 120, 508(2018).

[32] Jyothi I, Seo M W, Janardhanam V, Shim K H, Lee Y B, Ahn K S, Choi C J[J]. J. Alloys Compd., 556, 252(2013).

[33] Mönch W[J]. Appl. Phys. A, 87, 359(2007).

[34] Li A, Feng Q, Zhang J, Hu Z, Feng Z, Zhang K, Zhang C, Zhou H, hao Y[J]. Superlattices Microstruct., 119, 212(2018).

[35] Shen Y, Feng Q, Zhang K, Hu Z, Yan G, Cai Y, Mu W, Jia Z, Zhang C, Zhou H, Zhang J, Lian X, Lai Z, Hao Y[J]. Superlattices Microstruct., 133, 106179(2019).

[36] Sze S M, , Zhang R[J]. Physics of Semiconductor Devices 3rd Ed., 132-133(2008).

[37] Sasaki K, Higashiwaki M, Kuramata A, Masui T, Yamakoshi S[J]. IEEE Electron Device Lett., 34, 493(2013).

[38] Werner J H, Güttler H H[J]. J. Appl. Phys., 69, 1522(1991).