Experimental characterization improving the design of InGaAs/InP APD for single photon detection

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Optics Letters >Volume 3 >Issue 0s >Page 31 > Article

Chinese Optics Letters
Vol. 3, Issue 0s, 31 (2005)

Experimental characterization improving the design of InGaAs/InP APD for single photon detection

[in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]³, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]³, [in Chinese]², and [in Chinese]¹

Author Affiliations

¹School for Information and Opto-Electronic Science and Engineering, South China Normal University, Guangzhou 510631

²Department of Applied Physics, South China University of Technology, Guangzhou,510641

³College of Applied Physics, Guangdong University of Technolody, Guangzhou 510090

show less

DOI: Cite this Article Set citation alerts

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], "Experimental characterization improving the design of InGaAs/InP APD for single photon detection," Chin.Opt.Lett. 3, 31 (2005) Copy Citation Text

show less

Cited By

Article index updated: Jun. 17, 2024