In the study， n-type organic semiconductor material N2200 was doped in p-type organic semiconductor material PDVT-10 to form a trapping center with synaptic characteristics. Metal semiconductor junction formed by contact between organic semiconductor PDVT-10 and silver metal as the source electrode was combined to introduce Schottky barrier， so as to limit the source-drain current of organic synaptic devices， and finally reduce device energy consumption. In addition， the operating current of the devices exhibiting biological synaptic behavior was on the order of 10^-10 A， such as excitatory postsynaptic current and other basic synaptic behavior. The scheme has provided a simple and efficient strategy for constructing brain-like neuromorphic computing networks.