• Frontiers of Optoelectronics
  • Vol. 1, Issue 3, 336 (2008)
Xianjie LI1、*, Yonglin ZHAO1, Daomin CAI1, Qingming ZENG1, Yunzhang PU1, Yana GUO1, Zhigong WANG2, Rong WANG3, Ming QI3, Xiaojie CHEN3, and Anhuai XU3
Author Affiliations
  • 113th Institute of China Electronic Technology Group Corporation, Shijiazhuang 050051, China
  • 2Institute of RF&OEICs, Southeast University, Nanjing 210096, China
  • 3Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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    DOI: 10.1007/s12200-008-0059-4 Cite this Article
    Xianjie LI, Yonglin ZHAO, Daomin CAI, Qingming ZENG, Yunzhang PU, Yana GUO, Zhigong WANG, Rong WANG, Ming QI, Xiaojie CHEN, Anhuai XU. Monolithically integrated long wavelength photoreceiver OEIC based on InP/InGaAs HBT technology[J]. Frontiers of Optoelectronics, 2008, 1(3): 336 Copy Citation Text show less
    References

    [1] Bitter M, Bauknecht R, Hunziker W, et al. Monolithically integrated 40-Gb/s InP/InGaAs PIN/HBT optical receiver module. In: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials, Davos. IEEE Press, 1999: 381-384

    [2] Huber D, Bitter M, Du lk M, et al. A 53 GHz monolithically integrated InP/InGaAs PIN/HBT receiver OEIC with an electrical bandwidth of 63 GHz. In: Proceedings of the 12th International Conference on Indium Phosphide and Related Materials, Williamsburg. IEEE Press, 2000: 325-328

    [3] Mekonnen G G, Bach H G, Beling A, et al. 80-Gb/s InP-based waveguide-integrated photoreceiver. IEEE Journal of Selected Topics in Quantum Electronics, 2005, 11(2): 356-360

    [4] Gutierrez-Aitken A L, Yang K, Zhang X, et al. 16-GHz bandwidth InAlAs-InGaAs monolithically integrated PIN/HBT photoreceiver. IEEE Photonics Technology Letters, 1995, 7(11): 1339-1341

    [5] Ao J P, Liu W J, Li X J, et al. Long wavelength monolithic integrated photoreceiver. Semiconductor Optoelectronics, 2002, 23(1): 26-28 (in Chinese)

    [6] Li X J, Ao J P, Wang R, et al. An 850 nm wavelength monolithic integrated photoreceiver with a single-power- supplied transimpedance amplifier based on GaAs PHEMT technology. In: Proceedings of the 23rd IEEE Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, Baltimore. IEEE Press, 2001: 65-69

    [7] Li X J, Cai D M, Zhao Y L, et al. Design and process for selfaligned InP/InGaAs SHBT structure. Chinese Journal of Semiconductors, 2005, 26(z1): 136-139 (in Chinese)

    Xianjie LI, Yonglin ZHAO, Daomin CAI, Qingming ZENG, Yunzhang PU, Yana GUO, Zhigong WANG, Rong WANG, Ming QI, Xiaojie CHEN, Anhuai XU. Monolithically integrated long wavelength photoreceiver OEIC based on InP/InGaAs HBT technology[J]. Frontiers of Optoelectronics, 2008, 1(3): 336
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