• Frontiers of Optoelectronics
  • Vol. 6, Issue 2, 194 (2013)
Mohammad H. AKBARI and Mohsen JALALI*
Author Affiliations
  • School of Engineering, Shahed University, Tehran 3319118651, Iran
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    DOI: 10.1007/s12200-013-0314-1 Cite this Article
    Mohammad H. AKBARI, Mohsen JALALI. Position dependent circuit model for thin avalanche photodiodes[J]. Frontiers of Optoelectronics, 2013, 6(2): 194 Copy Citation Text show less
    References

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    [6] Jalali M, Moravvej-Farshi M K, Masud-Panah S, Nabavi A. An equivalent lumped circuit model for thin avalanche photodiodes with nonuniform electric field profile. Journal of Lightwave Technology, 2010, 28(23): 3395-3402

    [7] Yuan P, Anselm K A, Hu C, Nie H, Lenox C, Holmes A L, Streetman B G, Campbell J C, McIntyre R J. A new look at impact ionization-Part II: gain and noise in short avalanche photodiodes. IEEE Transactions on Electron Devices, 1999, 46(8): 1632-1639

    [8] Saleh M A, Hayat M M, Sotirelis P P, Holmes A L, Campbell J C, Saleh B E A, Teich M C. Impact-ionization and noise characteristics of thin III-Vavalanche photodiodes. IEEE Transactions on Electron Devices, 2001, 48(12): 2722-2731

    [9] Chuang S L. Physics of Optoelectronic Devices. Hoboken, New Jersey: John Wiley & Sons, 1995

    [10] McIntyre R J. A new look at impact ionization-Part I: a theory of gain, noise, breakdown probability, and frequency response. IEEE Transactions on Electron Devices, 1999, 46(8): 1623-1631

    [11] Goh Y L, Massey D J, Marshall A R J, Ng J S, Tan C H, Ng W K, Rees G J, Hopkinson M, David J P R, Jones S K. Avalanche multiplication in InAlAs. IEEE Transactions on Electron Devices, 2007, 54(1): 11-16

    Mohammad H. AKBARI, Mohsen JALALI. Position dependent circuit model for thin avalanche photodiodes[J]. Frontiers of Optoelectronics, 2013, 6(2): 194
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