Dual-wavelength ultra-short pulse generation by use of semiconductor laser diode

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Infrared and Laser Engineering >Volume 31 >Issue 4 >Page 329 > Article

Infrared and Laser Engineering
Vol. 31, Issue 4, 329 (2002)

Dual-wavelength ultra-short pulse generation by use of semiconductor laser diode

[in Chinese]^*, [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Dual-wavelength ultra-short pulse generation by use of semiconductor laser diode[J]. Infrared and Laser Engineering, 2002, 31(4): 329 Copy Citation Text

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Abstract

An attractive alternative to generate tunable dual-wavelength pulses by external injection seeding of a gain-switched Fabry-Perot laser diode (FP-LD) is demonstrated. The external injection seeding branch consists of a FP-LD, a 3dB photo-coupler and two fiber Bragg gratings (FBG's). The dual wavelength can be selected and their spacing can be tuned by adjusting two FBG's. The side-mode-suppression-ratio (SMSR) is better than 17dB over a 10nm wavelength tuning range. The whole system is simple and costs lower.

Keywords

External injection seeding Gain switching Ultra-short pulse

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