Development trends of GaN-based wide bandgap semiconductors: from solid state lighting to power electronic devices

Bo SHEN

Journals >Frontiers of Optoelectronics >Volume 8 >Issue 4 >Page 456 > Article

Frontiers of Optoelectronics
Vol. 8, Issue 4, 456 (2015)

Development trends of GaN-based wide bandgap semiconductors: from solid state lighting to power electronic devices

Bo SHEN^*

Author Affiliations

Research Center for Wide Bandgap Semiconductors and State Key Laboratory of Artificial Microstructures and Mesoscopic Physics,School of Physics, Peking University, Beijing 100871, China

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DOI: Cite this Article

Bo SHEN. Development trends of GaN-based wide bandgap semiconductors: from solid state lighting to power electronic devices[J]. Frontiers of Optoelectronics, 2015, 8(4): 456 Copy Citation Text

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Abstract

Bo SHEN. Development trends of GaN-based wide bandgap semiconductors: from solid state lighting to power electronic devices[J]. Frontiers of Optoelectronics, 2015, 8(4): 456

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