Fabrication of uncooled infrared focal plane array BST ferroelectric thin films and properties

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Infrared and Laser Engineering >Volume 30 >Issue 3 >Page 222 > Article

Infrared and Laser Engineering
Vol. 30, Issue 3, 222 (2001)

Fabrication of uncooled infrared focal plane array BST ferroelectric thin films and properties

[in Chinese]^*, [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Fabrication of uncooled infrared focal plane array BST ferroelectric thin films and properties[J]. Infrared and Laser Engineering, 2001, 30(3): 222 Copy Citation Text

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Abstract

BST ferroelectric thin films with perovskite structure on Pt/Ti/SiO-2/Si substrate have been fabricated by improved sol-gel processing. The dielectric constant ε-r and dielectric loss tgδ of BST5, BST10, BST15 were 375, 400, 425 and 0.041, 0.024, 0.010, respectively. Their remanent polarization P r and coercive field E c were 2μc/cm+2, 2.5μc/cm+2, 1.7μc/cm+2 and 40kV/cm, 50kV/cm, 35kV/cm, respectively. BST ferroelectric thin film is a kind of excellent material for uncooled infrared focal plane array.

Keywords

BST ferroelectric thin films Dielectric properties Ferroelectric properties Sol-gel Uncooled infrared focal plane arrays

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