A short-pulse （<200 ns） infrared （1 064 nm） Laser Induced Plasma Assisted Ablation （LIPAA） is considered as a micro-processing technology to ablate a single crystal diamond. The mechanism of different infrared laser parameters which include laser fluence， pulse width， repetition rate etc. influence on the micro-structure linewidth and depth was explored as well as the distance between single crystal diamond and copper target. While the pulse width is greater than 4 ns， the laser interacted on the good crystal orientation of the single crystal diamond with the prominent photothermal effect， and the laser fluence of the induced metal plasma cluster reaches a certain threshold， combined with the short pulse laser energy action， the surface temperature of the single crystal diamond rises rapidly to 600°C and above. At this time， the diamond surface layer has an etched micro-structure. When the laser with a pulse width of less than 4 ns bombards the surface of the target， the short-pulse laser bombards the target to induce metal plasma clusters. At this time， back sputtering of related metal targets and back etching and graphitization can also be achieved. The metal deposition and groove profiles are impacted on the pulse width and repetition rate of infrared laser. The experimental results prove that LIPAA is a new and reliable diamond micro-structure processing technology.