• Optics and Precision Engineering
  • Vol. 31, Issue 3, 301 (2023)
Chunxia WU, Jianqiu MA, Zhishan GAO, Zhenyan GUO*, and Qun YUAN
Author Affiliations
  • School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing210094, China
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    DOI: 10.37188/OPE.20233103.0301 Cite this Article
    Chunxia WU, Jianqiu MA, Zhishan GAO, Zhenyan GUO, Qun YUAN. Measurement of through silicon via by near-infrared micro interferometry based on aberration compensation[J]. Optics and Precision Engineering, 2023, 31(3): 301 Copy Citation Text show less
    Optical path of Linnik near-infrared reflective micro interferometry system
    Fig. 1. Optical path of Linnik near-infrared reflective micro interferometry system
    Modeling of TSV array hole with diameter of 10 μm and depth of 65 μm
    Fig. 2. Modeling of TSV array hole with diameter of 10 μm and depth of 65 μm
    Electric field transmission diagram of probe light focused on points A and B
    Fig. 3. Electric field transmission diagram of probe light focused on points A and B
    Wavefront phase of points A and B
    Fig. 4. Wavefront phase of points A and B
    Zernike polynomial fitting coefficients of aberration of points A and B
    Fig. 5. Zernike polynomial fitting coefficients of aberration of points A and B
    Linnik near-infrared micro interferometry system
    Fig. 6. Linnik near-infrared micro interferometry system
    Interferogram of top and bottom before aberration compensation
    Fig. 7. Interferogram of top and bottom before aberration compensation
    Image evaluation function with 20 iterations of compensation
    Fig. 8. Image evaluation function with 20 iterations of compensation
    Bottom image at 12 times of iterative compensation
    Fig. 9. Bottom image at 12 times of iterative compensation
    Interferograms of top and bottom after aberration compensation
    Fig. 10. Interferograms of top and bottom after aberration compensation
    Interference signal intensity at one point on bottom before aberration compensation
    Fig. 11. Interference signal intensity at one point on bottom before aberration compensation
    Interference signal intensity at one point on bottom surface after aberration compensation
    Fig. 12. Interference signal intensity at one point on bottom surface after aberration compensation
    Results of TSV measurement by different methods
    Fig. 13. Results of TSV measurement by different methods
    Top and bottom interference patterns of 3.85∶1 aspect-ratio TSV with two methods
    Fig. 14. Top and bottom interference patterns of 3.85∶1 aspect-ratio TSV with two methods
    Results of TSV with aspect ratio of 10.3∶1 by near-infrared micro interferometry based on aberration compensation
    Fig. 15. Results of TSV with aspect ratio of 10.3∶1 by near-infrared micro interferometry based on aberration compensation
    NumberResult
    165.97 μm
    267.06 μm
    366.64 μm
    465.33 μm
    566.44 μm
    665.73 μm
    765.78 μm
    865.39 μm
    966.07 μm
    1066.20 μm
    Mean value65.95 μm
    Standard deviation0.42 μm
    Absolute error0.68 μm
    Relative error1%
    Table 1. Ten measurements of depth of one hole in TSV using near-infrared micro interferometry
    Chunxia WU, Jianqiu MA, Zhishan GAO, Zhenyan GUO, Qun YUAN. Measurement of through silicon via by near-infrared micro interferometry based on aberration compensation[J]. Optics and Precision Engineering, 2023, 31(3): 301
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