Efficient 1.3-\mum electroluminescence from high concentration boron-diffused silicon p+-n junctions

Ting Chen; Guangzhao Ran; Liping You; Huabo Zhao; Guogang Qin

doi:10.3788/COL20090704.0274

Journals >Chinese Optics Letters >Volume 7 >Issue 4 >Page 04274 > Article

Chinese Optics Letters
Vol. 7, Issue 4, 04274 (2009)

Efficient 1.3-\mum electroluminescence from high concentration boron-diffused silicon p+-n junctions

Ting Chen, Guangzhao Ran, Liping You, Huabo Zhao, and Guogang Qin

Author Affiliations

State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871E-mail: rangz@pku.edu.cn

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DOI: 10.3788/COL20090704.0274 Cite this Article Set citation alerts

Ting Chen, Guangzhao Ran, Liping You, Huabo Zhao, Guogang Qin. Efficient 1.3-\mum electroluminescence from high concentration boron-diffused silicon p+-n junctions[J]. Chinese Optics Letters, 2009, 7(4): 04274 Copy Citation Text

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