High power semiconductor lasers with output power over 16 W for single emitter and 180 W for bar operation at 780 nm under CW operation

Yi Li; Haomiao Wang; Liang Zhang; Yuwen He; Kun Zhou; Weichuan Du; Linan He; Yao Hu; Deyong Wu; Songxin Gao; Chun Tang

doi:10.11884/HPLPB202335.230073

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