Researching

Journals
  • Advanced Photonics
  • Photonics Insights
  • Advanced Photonics Nexus
  • Photonics Research
  • Advanced Imaging
  • View All Journals
  • Chinese Optics Letters
  • High Power Laser Science and Engineering
    • Articles
  • Optics
  • Physics
  • Geography
  • View All Subjects
    • Conferences
  • CIOP
  • HPLSE
  • AP
  • View All Events
    • News
    About CLP
    Search by keywords or author
    Journals >Acta Photonica Sinica >Volume 36 >Issue 1 >Page 34 > Article
    • Acta Photonica Sinica
    • Vol. 36, Issue 1, 34 (2007)
    Temperature Dependence in Preparation of InxGa1-xN/GaN MQWs by MOCVD
    [in Chinese] and [in Chinese]
    Author Affiliations
  • [in Chinese]
    • show less
    DOI: Cite this Article
    [in Chinese], [in Chinese]. Temperature Dependence in Preparation of InxGa1-xN/GaN MQWs by MOCVD[J]. Acta Photonica Sinica, 2007, 36(1): 34 Copy Citation Text show less

    Abstract

    Keywords

    Abstract
    Get PDF
    Figures&Tables (0)
    Equations (0)
    References (8)
    Get Citation
    Copy Citation Text
    [in Chinese], [in Chinese]. Temperature Dependence in Preparation of InxGa1-xN/GaN MQWs by MOCVD[J]. Acta Photonica Sinica, 2007, 36(1): 34
    Download Citation
    Tools
    Share
    Save the article for my favorites
    Paper Information
    Recommended Topics
    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology