[1] RAO R ZH. Combined effect of turbulence and thermal blooming of laser propagation in atmosphere [J].Infrared and Laser Engineering, 2006, 35(2):130-134. (in Chinese)
[2] ZHANG P F, FAN CH Y, QIAO CH H, et al.. Analysis of scaling laws for phase compensation of focused beam under thermal blooming conditions [J]. Chinese Journal of Lasers, 2012, 39(2):213002. (in Chinese)
[3] HIGGS C, GREY P C, MOONEY J G, et al.. Dynamic target board for ABL-ACT performance characterization: airborne laser advanced technology Ⅱ [J]. SPIE, 1999, 3706:216-226.
[5] YANG P L, FENG G B, WANG ZH B, et al.. Mid-infrared high energy laser beam detector array [J]. Chinese Journal of Lasers, 2011, 38(7):702008. (in Chinese)
[6] CHU J H. Narrow Bandgap Semiconductor Physics [M]. Beijing: Science Press, 2005. (in Chinese)
[7] BARTOLI F, ESTEROWITZ L, KRUER M, et al.. Thermal modeling of laser damage in HgCdTe photoconductive and PbSnTe photovoltaic detectors [J]. J.Appl.Phys., 1975, 46(10):4519-4525.
[8] XU X J, ZHENG J L, LU Q SH, et al.. Research of damage thresholds of PC type HgCdTe detector under CW YAG Laser [J].High Power Laser & Particle Beams, 1998, 10(4):552-556. (in Chinese)
[11] WANG F, CHENG X A. Analysis of temperature measurement by Pt resistance in HgCdTe detector [J].Infrared and Laser Engineering, 2007, 4(36):461-466. (in Chinese)
[12] ROSBECK J P, STARR R E, PRICE S L, et al.. Background and temperature dependent current-voltage characteristics of HgCdTe photodiodes [J]. Journal of Applied Physics, 1982, 53(9):6430-6440.
[13] KINCH M A. Fundamental physics of infrared detector materials [J]. Journal of Electronic Materials, 2000, 29(6):809-817.