• Optoelectronics Letters
  • Vol. 10, Issue 3, 213 (2014)
Li-qun CHEN1、*, Yang-hua CHEN2, and Cheng LI2
Author Affiliations
  • 1Chengyi College, Jimei University, Xiamen 361021, China
  • 2Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China
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    DOI: 10.1007/s11801-014-4021-y Cite this Article
    CHEN Li-qun, CHEN Yang-hua, LI Cheng. Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate[J]. Optoelectronics Letters, 2014, 10(3): 213 Copy Citation Text show less
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    CLP Journals

    [1] CHEN Li-qun, HUANG Xiang-ying, LI Min, HUANG Yan-hua, WANG Yue-yun, YAN Guang-ming, LI Cheng. High-performance Ge p-i-n photodetector on Si substrate[J]. Optoelectronics Letters, 2015, 11(3): 195

    CHEN Li-qun, CHEN Yang-hua, LI Cheng. Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate[J]. Optoelectronics Letters, 2014, 10(3): 213
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