[1] GUO Xiang-yang, WANG Xiao-hui, CHANG Ben-kang, et al. High quantum efficiency of depth grade doping negative-electron-affinity GaN photocathode［J］. Applied Physics Letters, 2010, 97: 063104.
[2] ZHANG Yi-jun, NIU Jun, CHANG Ben-kang, et al. Influence of exponential-doping structure on photoemission capability of transmission-mode GaAs photocathodes［J］. Journal of Applied Physics, 2010, 108(9): 093108.
[3] ZOU Ji-jun, CHANG Ben-kang, YANG Zhi, et al. Evolution of surface potential barrier for negative-electron-affinity GaAs photocathodes［J］. Journal of Applied Physics, 2009, 105(1): 013714.
[4] ZOU Ji-jun, CHANG Ben-kang, ZHANG Yi-jun, et al. Variation of spectral response from cesium-covered GaAs and band features contained within the spectral response［J］. Applied Optics, 2010, 49(14): 2561-2565.
[5] LIU Lei, WANG Xin, CHEN Ji-lu, et al. Spectral matching technology of a low-light-level night-vision system with a laser illuminator［J］. Applied Optics, 2010, 49(3): 286-291.
[6] NIU Jun, ZHANG Yi-jun, CHANG Ben-kang, et al. Influence of exponential doping structure on the performance of GaAs photocathodes［J］. Applied Optics, 2009, 49(29): 5445-5450.
[7] ZHANG Yi-jun, CHANG Ben-kang, YANG Zhi, et al. Annealing study of carrier concentration in gradient-doped GaAs/GaAIAs epilayers grown by molecular beam epitaxy［J］. Applied Optics, 2009, 48(9): 1715-1720.
[8] LIU Lei, DU Yu-jie, CHANG Ben-kang, et al. Spectral response variation of a negative electron affinity photocathode in the preparation process［J］. Applied Optics, 2006, 45(24): 6094-6098.
[9] ZHANG Yi-jun, CHANG Ben-kang, YANG Zhi, et al. Distribution of carriers in gradient-doping transmission-mode GaAs photocathodes grown by molecular beam epitaxy［J］. Chinese Physics B, 2009, 18(10): 4541-4546.
[10] NIU Jun, YANG Zhi, CHANG Ben-kang. Equivalent method of solving quantum efficiency of reflection-mode exponential doping GaAs photocathode［J］. Chinese Physics Letters, 2009, 26(10): 104202.
