Q-Switched Yb:KGW Laser Based on Topological Insulators

Liu Jinghui; Tian Jinrong; Hu Mengting; Dou Zhiyuan; Song Yanrong

doi:10.3788/cjl201542.0802004

Journals >Chinese Journal of Lasers >Volume 42 >Issue 8 >Page 802004 > Article

Chinese Journal of Lasers
Vol. 42, Issue 8, 802004 (2015)

Q-Switched Yb:KGW Laser Based on Topological Insulators

Liu Jinghui^*, Tian Jinrong, Hu Mengting, Dou Zhiyuan, and Song Yanrong

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[in Chinese]

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DOI: 10.3788/cjl201542.0802004 Cite this Article Set citation alerts

Liu Jinghui, Tian Jinrong, Hu Mengting, Dou Zhiyuan, Song Yanrong. Q-Switched Yb:KGW Laser Based on Topological Insulators[J]. Chinese Journal of Lasers, 2015, 42(8): 802004 Copy Citation Text

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Abstract

Yb:KGW laser material is well suited to build diode-pumped pulse lasers in watt region because of its broad gain bandwidth of 24 nm, large emission cross section of 2.8×10- 20 cm2 and good thermal conductivity of 3.3 W/(m·K). A passively Q- switched Yb:KGW laser is obtained using a transmission- type topological insulator Bi2Se3 as a saturable absorber. The achieved maximum pulse energy is 4.7 μJ and the peak power is 3.13 W for a pulse duration of 1.5 μs.

Keywords

laser diode-pumped lasers passively Q-switch topological insulator Yb:KGW

Liu Jinghui, Tian Jinrong, Hu Mengting, Dou Zhiyuan, Song Yanrong. Q-Switched Yb:KGW Laser Based on Topological Insulators[J]. Chinese Journal of Lasers, 2015, 42(8): 802004

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