Vanadium dioxide (VO2) samples are deposited by reactive magnetron sputter. And then a series of rapid thermal process (RTP) conditions: 500 ℃/10 s、500 ℃/15 s and 500 ℃/20 s are employed to treat the samples. In the temperature cycle 20 ℃~80 ℃, electrical and optical properties of VO2 thin film are measured by four-probe meter and terahertz time-domain spectroscopy (THz-TDS) technology, respectively. It is observed that the electrical phase transition can reach up to more than two orders of magnitude and maximal change of the THz transmission is 57.9% before and after semiconductor-metal phase transition. Moreover, both electrical and optical phase transition amplitudes of sample treated by 500 ℃/10 s are larger than the other two samples. In fact, the transition amplitude does not change any more when the RTP time reaches about 15 s. The phase transition temperature is almost the same among the different samples. But the electrical phase transitions temperature is lower than the optical transitions temperature. Electrical transition temperature is about 56 ℃ and optical transition temperature is nearly 60 ℃.