Author Affiliations
1Graduate School, China Academy of Engineering Physics, Beijing 100088, China2National Laboratory of Computational Physics, Beijing Institute of Applied Physics and Computational Mathematics, Beijing 100088, Chinashow less
Fig. 1. EAM potential for Ce: (a) The pair function Φ(rij) and the density function f(rij); (b) the embedded function F(ρ).
Ce的EAM势 (a)对势函数和电子密度分布函数; (b)嵌入能函数
Fig. 2. The cold energy of fcc Ce calculated with the newly developed EAM potential.由本文EAM势得出的面心立方Ce的冷能曲线
Fig. 3. Generalized stacking fault energy and generalized twining fault energy curve for (a) α-Ce and (b) γ-Ce.
面心立方Ce中的广义层错能和广义孪晶能 (a) α-Ce; (b) γ-Ce
Fig. 4. Phonon density of states for FCC Ce.面心立方Ce的声子态密度
Fig. 5. The vibrational entropy Sviband its change ΔSvibbetween two phases (the inset) plotted as functions of temperature.
α-Ce和γ-Ce两相的晶格振动熵Svib以及熵差ΔSvib (右下插图)随温度T的变化
Fig. 6. Phonon dispersion relations for FCC Ce.面心立方Ce的声子色散谱
Fig. 7. Isotherms of FCC Ce: (a) NPT, pressure increased; (b) NPT, pressure decreased; (c) NVT.面心立方Ce的等温线 (a) NPT增压; (b) NPT减压; (c) NVT
Fig. 8. The path of Ce γ→α and α→γ phase transition.
Ce的γ→α和α→γ相变路径
Fig. 9. Radial distribution function for zero pressure (black), the A state (red), and the B state (blue) pointed in Fig.7.
零压以及图7中A, B两点状态的径向分布函数
| γ-Ce
| | α-Ce
| 实验 | 第一性原理 | 本文EAM | 实验 | 第一性原理 | 本文EAM | a0/Å
| 5.16[4] | 5.22[11] | 5.14 | | 4.84[4] 4.90[30] | 4.63[11] | 4.81 | Ecoh/eV
| 4.32[4] | 4.35[11] | 4.32 | 4.3[11] | 3.76[11] | 4.3255 | 体弹模量/GPa | 18.18[31] | 28.3[11] | 16.78 | 35.0[32], 16.94[33] | 37.0[34] | 37.00 | c11 /GPa
| 26.01[31] | | 23.06 | | 52.9[34] | 59.77 | c12 /GPa
| 14.26[31] | | 13.64 | | 29.1[34] | 25.62 | c44 /GPa
| 17.30[31] | | 17.64 | | 44.6[34] | 49.98 | 剪切模量/GPa | 12.73[31] | | 12.47 | 17.26[33] | | 36.82 |
|
Table 1. EAM predicted properties of Ce lattice in comparison with experimental and ab initiodata.
面心立方Ce的基本性质的EAM计算值与实验和第一性原理结果的比较
| γ-Ce
| | α-Ce
| 之前的结果 | 本文EAM | 之前的结果 | 本文EAM | Eif/eV
| 3.3[22] | 1.93 | | | 2.97 | Evf/eV
| 0.75[22], 2.02[23] | 0.85 | | 1.15 | γ(100)/mJ·m–2 | 697[22], 2140[23] | 391 | | 308 | γ(110)/mJ·m–2 | 797[22], 2220[23] | 442 | | 390 | γ(111)/mJ·m–2 | 586[22], 2190[23] | 297 | | 195 | γssf/mJ·m–2 | 486[22],58[37], 16[37], –0.2 [37] | 457 | 301[37], 311[37], 369[37] | 734 | γusf/mJ·m–2 | 501[22] | 543 | | 822 | γutf/mJ·m–2 | 12[22] | 768 | | 1167 |
|
Table 2. Calculated formation energy of lattice defectsin γ-Ce and α-Ce.
γ-Ce and α-Ce中晶体缺陷的形成能