• Journal of Terahertz Science and Electronic Information Technology
  • Vol. 20, Issue 6, 535 (2022)
LYU Hanghang1、2、*, CAO Yanrong1、2, MA Maodan1、2, ZHANG Longtao1、2, REN Chen1、2, WANG Zhiheng1、2, LYU Ling1, ZHENG Xuefeng3, and MA Xiaohua3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.11805/tkyda2022012 Cite this Article
    LYU Hanghang, CAO Yanrong, MA Maodan, ZHANG Longtao, REN Chen, WANG Zhiheng, LYU Ling, ZHENG Xuefeng, MA Xiaohua. Review of radiation effects on GaN HEMT devices[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(6): 535 Copy Citation Text show less
    References

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    LYU Hanghang, CAO Yanrong, MA Maodan, ZHANG Longtao, REN Chen, WANG Zhiheng, LYU Ling, ZHENG Xuefeng, MA Xiaohua. Review of radiation effects on GaN HEMT devices[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(6): 535
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