• Journal of Synthetic Crystals
  • Vol. 49, Issue 5, 815 (2020)
MA Fei1, GUI Xiangquan2, and LI Li2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: Cite this Article
    MA Fei, GUI Xiangquan, LI Li. Process of Improving the Change Rate at High and Low Temperature Current Amplification Factor of Silicon Power Transistor[J]. Journal of Synthetic Crystals, 2020, 49(5): 815 Copy Citation Text show less
    References

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    [7] Klaassen D B M. A unified mobility model for device simulation-I. Model equations and concentration dependence[J].Solid-State Electronics,1992,35(7): 953-959.

    [8] Klaassen D B M. A unified mobility model for device simulation-II. Temperature dependence of carrier mobility and lifetime[J].Solid-State Electronics,1992,35(7): 961-967.

    [9] Arkhipov V I, Emelianova E V, Heremans P, et al. Analytic model of carrier mobility in doped disordered organic semiconductors[J].Physical Review B,2005,72(23): 235202.

    [10] Adler M S, Possin G E. Achieving accuracy in transistor and thyristor modeling[J].Electron Devices IEEE Transactions On,1981,28(9): 1053-1059.

    MA Fei, GUI Xiangquan, LI Li. Process of Improving the Change Rate at High and Low Temperature Current Amplification Factor of Silicon Power Transistor[J]. Journal of Synthetic Crystals, 2020, 49(5): 815
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