• Chinese Journal of Lasers
  • Vol. 48, Issue 20, 2001002 (2021)
Hong Liang1、2, Fang Wei1、*, Yanguang Sun1, Guangwei Sun1, and Haiwen Cai1、2、**
Author Affiliations
  • 1Key Laboratory of Space Laser Communication and Detection Technology, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.3788/CJL202148.2001002 Cite this Article Set citation alerts
    Hong Liang, Fang Wei, Yanguang Sun, Guangwei Sun, Haiwen Cai. A 1310 nm Band Narrow Linewidth Hybrid Integrated External Cavity Semiconductor Laser Based on Fiber Bragg Gratings[J]. Chinese Journal of Lasers, 2021, 48(20): 2001002 Copy Citation Text show less
    Schematic diagrams. (a) Schematic diagram of ECDL; (b) principle of FBG optical negative feedback; (c) structure diagram of FBG packaged with V-groove substrate; (d) overall structure diagram of ECDL; (e) ECDL with butterfly package; (f) 1310 nm ECDL module
    Fig. 1. Schematic diagrams. (a) Schematic diagram of ECDL; (b) principle of FBG optical negative feedback; (c) structure diagram of FBG packaged with V-groove substrate; (d) overall structure diagram of ECDL; (e) ECDL with butterfly package; (f) 1310 nm ECDL module
    Characteristics of the 1310 nm ECDL. (a) PI curve; (b) output spectrum
    Fig. 2. Characteristics of the 1310 nm ECDL. (a) PI curve; (b) output spectrum
    Current tuning characteristic of the 1310 nm ECDL
    Fig. 3. Current tuning characteristic of the 1310 nm ECDL
    Linewidth of 1310 nm ECDL. (a) Spectrum diagram of measured linewidth; (b) measured linewidth under different operating currents
    Fig. 4. Linewidth of 1310 nm ECDL. (a) Spectrum diagram of measured linewidth; (b) measured linewidth under different operating currents
    Frequency and power stability of the 1310 nm external cavity semiconductor laser
    Fig. 5. Frequency and power stability of the 1310 nm external cavity semiconductor laser
    Schematic diagram of piezoelectric ceramic transducer disturbance experiment
    Fig. 6. Schematic diagram of piezoelectric ceramic transducer disturbance experiment
    Results of piezoelectric ceramic disturbance experiments under different disturbance signal amplitudes. (a1)(b1) 50 mV; (a2)(b2) 100 mV; (a3)(b3) 150 mV
    Fig. 7. Results of piezoelectric ceramic disturbance experiments under different disturbance signal amplitudes. (a1)(b1) 50 mV; (a2)(b2) 100 mV; (a3)(b3) 150 mV
    Hong Liang, Fang Wei, Yanguang Sun, Guangwei Sun, Haiwen Cai. A 1310 nm Band Narrow Linewidth Hybrid Integrated External Cavity Semiconductor Laser Based on Fiber Bragg Gratings[J]. Chinese Journal of Lasers, 2021, 48(20): 2001002
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