• Acta Photonica Sinica
  • Vol. 40, Issue 9, 1342 (2011)
[in Chinese]*, [in Chinese], [in Chinese], and [in Chinese]
Author Affiliations
  • [in Chinese]
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    DOI: 10.3788/gzxb20114009.1342 Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Fabrication and Electrical Properties of Highly Preferred Orientation Mo Thin Film by DC Magnetron Sputtering[J]. Acta Photonica Sinica, 2011, 40(9): 1342 Copy Citation Text show less

    Abstract

    Mo thin film was prepared on glass substrate by DC magnetron sputtering method. Effects of the craft on the structure,morphology and electrical performance of Mo thin film were studied by X-ray Diffraction Analysis,Atomic Force Microscope and Four-point Probe System,respectively.It was found that the Mo thin film was grown with (211) preferred orientation at 150℃,and (110) preferred orientation in other temperature conditions. The roughness of the sample did not change significantly with the increase of substrate temperature, which is about 0.35 nm,but increased with the increase of sputtering power density. On the other hand,the resistivity of the thin film decreased in an almost exponential decay with the increase of sputtering power density,and decreased and then increased with the increase of substrate temperature. Moreover it was reduced to the minimum of 2.02 × 10-5Ω·cm at 150 ℃.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Fabrication and Electrical Properties of Highly Preferred Orientation Mo Thin Film by DC Magnetron Sputtering[J]. Acta Photonica Sinica, 2011, 40(9): 1342
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