Extraction of Semiconductor Laser Rate Equations Parameters（Invited）

Jiankun WANG; Yongguang HUANG; Yihui LIU

doi:10.3788/gzxb20225102.0251206

Journals >Acta Photonica Sinica >Volume 51 >Issue 2 >Page 0251206 > Article

Acta Photonica Sinica
Vol. 51, Issue 2, 0251206 (2022)

Extraction of Semiconductor Laser Rate Equations Parameters（Invited）

Jiankun WANG^1、2、3, Yongguang HUANG^{1、2、3、*}, and Yihui LIU^1、2、3

Author Affiliations

¹Key Laboratory of Semiconductor Materials Science，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China

²Center of Materials Science and Optoelectronics Engineering，University of Chinese Academy of Sciences，Beijing 100049，China

³Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices，Beijing 100083，China

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DOI: 10.3788/gzxb20225102.0251206 Cite this Article

Jiankun WANG, Yongguang HUANG, Yihui LIU. Extraction of Semiconductor Laser Rate Equations Parameters（Invited）[J]. Acta Photonica Sinica, 2022, 51(2): 0251206 Copy Citation Text

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Fig. 1. The response curve of a semiconductor laser on different bias currents

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Fig. 2. The value comparison between curve fitting and parameter subtracted data in terms of different bias currents and damping factors

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Fig. 3. The fitting results

f_{r}

and γ according to S₂₁ curve on different bias currents

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Fig. 4. The value comparison of

f_{r}^{2}

and Z between curve fitting and parameter subtracted data in terms of different bias currents and damping factors

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Bias current /mA	f_r obtained by traditional subtraction method/GHz	f_r obtained by improved parameter extraction formula/GHz	γ obtained by traditional subtraction method/GHz	γ obtained by improved parameter extraction formula/GHz
20	6.744	6.433	17.967	17.967
30	9.372 2	8.874 2	26.763	26.773
40	11.317	10.63	34.483	34.497
50	12.726	11.876	40.597	40.615
60	13.95	12.92	46.718	46.74
70	14.914	13.585	54.66	54.687
80	15.673	14.108	60.647	60.677
90	16.192	14.549	63.142	63.174

Table 1. The fitting results of

f_{r}

and γ obtained by traditional subtraction method according to Eq.（14）and improved parameter extraction formula according to Eq.（21）respective

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Bias current/mA	20	30	40	50	60	70	80	90
$2 Z / γ^{2}$	12.12	10.68	9.50	8.76	8.04	6.88	6.27	6.19

Table 2. The calculated value of

2 Z / γ^{2}

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Paramete	Name	Value	Unit
$K$	K-factor	0.210 5	$n s$
$τ_{n}$	Electron lifetime	0.130 4	$n s$
$I_{t h}$	Threshold current	10.585 8	$m A$
$τ_{p}$	Photon lifetime	5.23	$p s$
$β$	Spontaneous emission factor	3.2×10^-4
$V$	Active region volume	18	μ $m^{3}$
$Γ$	Optical mode confinement factor	0.1
$g_{0}$	Gain slope constant	5.6×10^-6	$c m^{3} s^{- 1}$
$ε$	Gain compression factor	0.74×10^-18	$c m^{3}$
$N_{0}$	Transparency carrier density	0.9×10²⁴	$m^{- 3}$

Table 3. The subtracted laser parameter values by a new improved method

Jiankun WANG, Yongguang HUANG, Yihui LIU. Extraction of Semiconductor Laser Rate Equations Parameters（Invited）[J]. Acta Photonica Sinica, 2022, 51(2): 0251206

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