• Optoelectronics Letters
  • Vol. 14, Issue 3, 214 (2018)
Jun WANG and Hong-yan and ZHANG
Author Affiliations
  • School of Physical Science and Technology, Xinjiang University, Urumqi 830046, China
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    DOI: 10.1007/s11801-017-7013-x Cite this Article
    WANG Jun, and ZHANG Hong-yan. Structure and photoluminescence properties of InN films grown on porous silicon by MOCVD[J]. Optoelectronics Letters, 2018, 14(3): 214 Copy Citation Text show less
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    WANG Jun, and ZHANG Hong-yan. Structure and photoluminescence properties of InN films grown on porous silicon by MOCVD[J]. Optoelectronics Letters, 2018, 14(3): 214
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