[1] NIKZAD S, HOENK M, JEWELL A D, et al. Single photon counting UV solar-blind detectors using silicon and III-Nitride materials[J]. Sensors, 2016, 16(6): 927-947.
[3] CHANG Y W, HUANG Y T. The ring-shaped CMOS-based phototransistor with high responsivity for the UV/blue spectral range[J]. IEEE Photonics Technology Letters, 2009, 21(13): 899-901.
[4] LEE C J, WON C H, BAE M, et al. Hybrid UV active pixel sensor implemented using GaN MSM UV sensor and Si-based circuit[J]. IEEE Sensors Journal, 2015, 15(9): 5071-5074.
[5] PRAKASH N, SINGH M, KUMAR G, et al. Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes[J]. Applied Physics Letters, 2016, 109(24): 1-5.
[7] KE Ang, WEN Hua-feng, LONG Dan-gui, et al. Design of high-performance diode groups traveling-wave photodiode arrays[J]. Acta Photonica Sinica, 2016, 45(1): 0104003.
[8] WANG Wei, BAO Xiao-yuan, CHEN Li, et al. A CMOS single photo avalanche diode device with high photon detection efficiency[J]. Acta Photonica Sinica, 2016, 45(8): 0823001.
[9] LI Gui-ke, FENG Peng, WU Nan-jian. A novel monolithic ultraviolet image sensor based on a standard CMOS process[J]. Journal of Semiconductors, 2011, 32(10): 133-138.
[10] CHEN Chang-ping, ZHAO Yong-jia, ZHOU Xiao-ya, et al. Modeling, fabrication and measurement of a novel CMOS UV/blue-extended photodiode[J]. Journal of Central South University, 2014, 21(10): 3821-3827.
[11] PAUCHARD A, ROCHAS A, RANDJELOVIC Z, et al. Ultraviolet avalanche photodiode in CMOS technology[C]. International Electron Devices Meeting Technical Digest, 2000: 709-712.
[12] WANG Han, JIN Xiang-liang, CHEN Chang-ping, et al. A novel integrated ultraviolet photodetector based on standard CMOS process[J]. Chinese Physics B, 2015, 24(3): 418-422.
[13] SHI L, SARUBBI F, NANVER L K, et al. Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range[J]. Procedia Engineering, 2010, 5(3): 633-636.
[14] JO S H, BAE M, ChOI B S, et al. High-sensitivity active pixel sensor with variable threshold photodetector[C]. SPIE Sensing Technology+ Applications. International Society for Optics and Photonics, 2015: 1-7.
[15] CHEN Chang-ping, JIN Xiang-liang, LUO Jun. A novel composite UV/blue photodetector based on CMOS technology: design and simulation[J]. Optoelectronics Letters, 2013, 9(6): 414-417.
[17] CAMPOS F S, FARAMARZPOUR N, MARINOV O, et al. Photodetection with gate-controlled lateral BJTs from standard CMOS technology[J]. IEEE Sensors Journal , 2013, 13(5): 1554-1563.