Changming Sun, Qiangshuang Li, Jingyi Wang, Haiwei Du. Influence and Optimization of Interference Effect in GaAs p-i-n Structure on Terahertz Wave Generation[J]. Chinese Journal of Lasers, 2023, 50(22): 2214001
- Chinese Journal of Lasers
- Vol. 50, Issue 22, 2214001 (2023)
Fig. 1. Schematic diagram of GaAs p-i-n structure
Fig. 2. Transient photocurrent generated by GaAs p-i-n structure with thickness of i-layer of 4 μm and 0.4 μm with or without interference effect
Fig. 3. Waveforms of terahertz pulses generated by GaAs p-i-n structures with different thicknesses of i-layer and with or without considering interference effect. (a) Time-domain waveforms; (b) corresponding frequency spectra
Fig. 4. Trends of photocurrent peak amplitude and terahertz electric field intensity peak amplitude with thickness of i-layer from 0.4 to 4 μm with or without considering interference effect. (a) Trends of photocurrent peak amplitude; (b) trends of terahertz electric field intensity peak amplitude
Fig. 5. Influence of interference effect on terahertz wave generation under different thicknesses of i-layer. (a) Change of terahertz pulse energy with or without considering interference effect; (b) change of interference effect factor
Fig. 6. Trend of terahertz pulse full-width at half-maximum with thickness of i-layer from 0.4 to 4 μm with interference effect considered
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