• Chinese Journal of Lasers
  • Vol. 25, Issue 7, 584 (1998)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
Author Affiliations
  • [in Chinese]
  • show less
    DOI: Cite this Article Set citation alerts
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High Power External Cavity Semiconductor Laser[J]. Chinese Journal of Lasers, 1998, 25(7): 584 Copy Citation Text show less

    Abstract

    The high power external cavity semiconductor laser has become an important optoelectronic device. In this paper, using a grating as the feedback component, a laser of single frequency output over 70 mW and side mode suppression over 30 dB is reported. Meanwhile, some parameters which influence the performance of the high power external cavity laser are analyzed.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High Power External Cavity Semiconductor Laser[J]. Chinese Journal of Lasers, 1998, 25(7): 584
    Download Citation