GaAsP/GaInP quantum wells are grown on different misoriented substrates by low pressure_metal-organic chemical vapor deposition (LP_MOCVD) technique. The samples are characterized via photo luminescence (PL) spectroscopy at room temperature. The effect of the growing temperature of barrier layer、 Ⅴ/Ⅲ ratio of quantum well layer and offcut substrate to emitting wavelength、 PL intensity and full-width at half-maximum (FWHM) is discussed. Samples with lower barrier growing temperature shows higher PL intensity. The PL intensity will increase when the Ⅴ/Ⅲ ratio of quantum well layer decreases, and the PL peak exhibits a red shift at the same time. Samples grown on substrate (100) oriented 15° off towards <111> exhibit the highest PL intensity and narrowest FWHM.