InP Based Long Wavelength Transistor Lasers （Invited）

Song LIANG^1、2、3

Author Affiliations

¹Key Laboratory of Semiconductor Materials Science， Institute of Semiconductors， Chinese Academy of Sciences， Beijing00083， China

²Center of Materials Science and Optoelectronics Engineering， University of Chinese Academy of Sciences， Beijing100049， China

³Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices， Beijing10008， China

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DOI: 10.3788/gzxb20204911.1149008 Cite this Article

Song LIANG. InP Based Long Wavelength Transistor Lasers （Invited）[J]. Acta Photonica Sinica, 2020, 49(11): 116 Copy Citation Text

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Fig. 1. Schematic structure and direct modulation response of a GaAs based TL

Fig. 2. Tunnel junction TL band and light power as a function of V_CE^[9]

Fig. 3. Laser integrated with transistor by conventional and TL ways^[11]

Fig. 4. Schematic structure and material structure of InP based shallow ridge TL^[15]

Fig. 5. Light power as a function of base current of InP based shallow ridge TL^[15]

Fig. 6. Schematic structure and common emitter mode opto-electronic properties of InP based buried ridge TL^[18]

Fig. 7. Schematic structure of deep ridge TL and SEM cross-section picture of an InP deep ridge TL^[21]

Fig. 8. Material structure of the room temperature deep ridge InP TL^[24]

Fig. 9. Common emitter mode opto-electronic properties an InP deep ridge TL^[24]

Fig. 10. Common emitter mode light power and current gain of TLs having doping level from 0 to 1×10¹⁸cm^-3 in the MQWs

Fig. 11. Schematic structure and current distribution of a-TL^[26]

Song LIANG. InP Based Long Wavelength Transistor Lasers （Invited）[J]. Acta Photonica Sinica, 2020, 49(11): 116

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