• Chinese Journal of Lasers
  • Vol. 24, Issue 8, 760 (1997)
[in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]2, and [in Chinese]2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Deposition of Sulphide Films by Excimer laser Photochemical Reaction[J]. Chinese Journal of Lasers, 1997, 24(8): 760 Copy Citation Text show less
    References

    [1] C. E. Otis, A. Gupta, B. Braren. Gas-phase oxidation of copper during laser ablation of YBa2Cu3O7-D in different oxidizing ambients. Appl. Phys. Lett., 1993, 62(1): 102~104

    [2] Yukio Nishimura, Hiroki Ujita, Masaharu Tsuji. Tantalum oxide film formation by excimer laser ablation. Applied Surface Science, 1995, 89: 393~399

    [3] I. N. Mihailescu, N. Chitica, L. C. Nistor et al.. Deposition of high quality TiN films by excimer laser ablation in reactive gas. J. Appl. Phys., 1993, 74(9): 5781~5789

    [4] A. Luches, G. Leggieri, M. Martino et al.. Laser reactive ablation deposition of nitride films. Applied Surface Science, 1994, 7980: 244~249

    [5] M. L. DeGiorgi, G. Leggieri, A. Luches et al.. Laser-reactive ablation deposition of silicon-nitride films. Appl. Phys., 1995, A60: 275~283

    [8] T. Zehnder, J. Balmer, W. Luthy et al.. Determination of limits in deposition of adhering α-C films on silicon produced by pulsed laser deposition. Thin Solid Films, 1995, 263: 198~202

    [9] K. Laajalehto, I. Kartio, P. Nowak. XPS study of clean metal sulfide surfaces. Applied Surface Science, 1994, 81: 11~15

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Deposition of Sulphide Films by Excimer laser Photochemical Reaction[J]. Chinese Journal of Lasers, 1997, 24(8): 760
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