Author Affiliations
1Department of Optics and Electric Engineering, Changchun University of Science and Technology,Jilin, Changchun 130022, China2Institute of Functional Crystals, Tianjin University of Technology, Tianjin 300384, China3Tianjin Key Laboratory of Functional Crystal Materials, Tianjin University of Technology, Tianjin 300384, Chinashow less
Fig. 1. Optical path diagram of frequency doubling modulation of 278 nm all-solid-state laser system
Fig. 2. X-ray photoelectron spectroscopy of hafnium
Fig. 3. Optical constants of HfO2 film. (a) Refractive index; (b) extinction coefficient
Fig. 4. Three-dimensional morphologies of UV-SiO2 films at different deposition rates. (a) 0.5 nm/s; (b) 0.7 nm/s; (c) 0.9 nm/s
Fig. 5. Optical constants of thin film materials. (a) HfO2 film; (b) UV-SiO2 film
Fig. 6. Relationship between electric field intensity and film period at film/air interface
Fig. 7. Theoretically spectral curve of front surface
Fig. 8. Theoretically spectral curve of back surface
Fig. 9. Theoretically transmittance spectral curve of double-side design
Fig. 10. Three-dimensional curves of theoretical design of separation film for frequency doubling at different wavelengths. (a) At 278 nm; (b) at 556 nm
Fig. 11. Transmission test curves of single-side coating. (a) Front surface; (b) back surface
Fig. 12. Spectral test curves of double-side coating. (a) Transmittance; (b) reflectivity
Fig. 13. Measured spectrum as a function of incident angle
Fig. 14. Laser induced damage threshold
Parameter | Specification |
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Substrate | JGS1 | Incident angle /(°) | 45±5 | Wavelength /nm | 278 | 556 | Transmittance /% | ≥98.5 | ≤0.5 |
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Table 1. Technical parameters of beam splitter
No. | Flow rate ofO2-APS /(mL·min-1) | Flow rate ofO2-HPE /(mL·min-1) |
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1 | 40 | 10 | 2 | 35 | 15 | 3 | 30 | 20 |
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Table 2. Scheme for oxygen distribution
Depositionrate /(nm·s-1) | Sa /μm | Sq /μm | Sz /μm |
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0.5 | 0.0022 | 0.0024 | 0.0582 | 0.7 | 0.0012 | 0.0012 | 0.0266 | 0.9 | 0.0018 | 0.0020 | 0.1364 |
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Table 3. Surface roughness of UV-SiO2 film at different deposition rates
Materials | Substratetemperature /℃ | Degree ofvacuum /(10-4 Pa) | Depositionrate /(nm·s-1) | Flow rate of O2 /(mL·min-1) |
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APS | HPE |
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Hf | 180 | 1 | 0.25 | 35 | 15 | UV-SiO2 | 180 | 1 | 0.70 | 5 | 0 |
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Table 4. Process parameters of deposition of Hf and UV-SiO2 films
Materials | Biasvoltage /V | Coilcurrent /A | Dischvoltage /V | Dischcurrent /mA | Ar flow 1 /(mL·min-1) | Ar flow 2 /(mL·min-1) |
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Hf | 95 | 1.45 | 83 | 50 | 5.3 | 6.5 | UV-SiO2 | 160 | 1.80 | 130 | 55 | 5.0 | 7.0 |
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Table 5. Ion source process parameters of Hf and UV-SiO2
No. | Energy density /(J·cm-2) | Damage probability /% |
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1 | 7.0 | 0 | 2 | 9.0 | 0 | 3 | 11.0 | 0 | 4 | 13.0 | 2.5 | 5 | 15.0 | 30.5 | 6 | 17.0 | 46.0 | 7 | 19.0 | 61.5 | 8 | 21.0 | 89.5 | 9 | 23.0 | 100 | 10 | 25.0 | 100 |
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Table 6. Damage probability corresponding to laser with different energy densities