• Chinese Journal of Lasers
  • Vol. 46, Issue 12, 1203002 (2019)
Xiuhua Fu1, Cheng Chen1、*, Zhanggui Hu2、3, Shifu Xiong2、3、**, Jing Zhang1, Fei Wang1, and Chenxin Wang2、3
Author Affiliations
  • 1Department of Optics and Electric Engineering, Changchun University of Science and Technology,Jilin, Changchun 130022, China
  • 2Institute of Functional Crystals, Tianjin University of Technology, Tianjin 300384, China
  • 3Tianjin Key Laboratory of Functional Crystal Materials, Tianjin University of Technology, Tianjin 300384, China
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    DOI: 10.3788/CJL201946.1203002 Cite this Article Set citation alerts
    Xiuhua Fu, Cheng Chen, Zhanggui Hu, Shifu Xiong, Jing Zhang, Fei Wang, Chenxin Wang. Development of Separation Film for Frequency Doubling in 278 nm All-Solid-State Laser System[J]. Chinese Journal of Lasers, 2019, 46(12): 1203002 Copy Citation Text show less
    Optical path diagram of frequency doubling modulation of 278 nm all-solid-state laser system
    Fig. 1. Optical path diagram of frequency doubling modulation of 278 nm all-solid-state laser system
    X-ray photoelectron spectroscopy of hafnium
    Fig. 2. X-ray photoelectron spectroscopy of hafnium
    Optical constants of HfO2 film. (a) Refractive index; (b) extinction coefficient
    Fig. 3. Optical constants of HfO2 film. (a) Refractive index; (b) extinction coefficient
    Three-dimensional morphologies of UV-SiO2 films at different deposition rates. (a) 0.5 nm/s; (b) 0.7 nm/s; (c) 0.9 nm/s
    Fig. 4. Three-dimensional morphologies of UV-SiO2 films at different deposition rates. (a) 0.5 nm/s; (b) 0.7 nm/s; (c) 0.9 nm/s
    Optical constants of thin film materials. (a) HfO2 film; (b) UV-SiO2 film
    Fig. 5. Optical constants of thin film materials. (a) HfO2 film; (b) UV-SiO2 film
    Relationship between electric field intensity and film period at film/air interface
    Fig. 6. Relationship between electric field intensity and film period at film/air interface
    Theoretically spectral curve of front surface
    Fig. 7. Theoretically spectral curve of front surface
    Theoretically spectral curve of back surface
    Fig. 8. Theoretically spectral curve of back surface
    Theoretically transmittance spectral curve of double-side design
    Fig. 9. Theoretically transmittance spectral curve of double-side design
    Three-dimensional curves of theoretical design of separation film for frequency doubling at different wavelengths. (a) At 278 nm; (b) at 556 nm
    Fig. 10. Three-dimensional curves of theoretical design of separation film for frequency doubling at different wavelengths. (a) At 278 nm; (b) at 556 nm
    Transmission test curves of single-side coating. (a) Front surface; (b) back surface
    Fig. 11. Transmission test curves of single-side coating. (a) Front surface; (b) back surface
    Spectral test curves of double-side coating. (a) Transmittance; (b) reflectivity
    Fig. 12. Spectral test curves of double-side coating. (a) Transmittance; (b) reflectivity
    Measured spectrum as a function of incident angle
    Fig. 13. Measured spectrum as a function of incident angle
    Laser induced damage threshold
    Fig. 14. Laser induced damage threshold
    ParameterSpecification
    SubstrateJGS1
    Incident angle /(°)45±5
    Wavelength /nm278556
    Transmittance /%≥98.5≤0.5
    Table 1. Technical parameters of beam splitter
    No.Flow rate ofO2-APS /(mL·min-1)Flow rate ofO2-HPE /(mL·min-1)
    14010
    23515
    33020
    Table 2. Scheme for oxygen distribution
    Depositionrate /(nm·s-1)Sa /μmSq /μmSz /μm
    0.50.00220.00240.0582
    0.70.00120.00120.0266
    0.90.00180.00200.1364
    Table 3. Surface roughness of UV-SiO2 film at different deposition rates
    MaterialsSubstratetemperature /℃Degree ofvacuum /(10-4 Pa)Depositionrate /(nm·s-1)Flow rate of O2 /(mL·min-1)
    APSHPE
    Hf18010.253515
    UV-SiO218010.7050
    Table 4. Process parameters of deposition of Hf and UV-SiO2 films
    MaterialsBiasvoltage /VCoilcurrent /ADischvoltage /VDischcurrent /mAAr flow 1 /(mL·min-1)Ar flow 2 /(mL·min-1)
    Hf951.4583505.36.5
    UV-SiO21601.80130555.07.0
    Table 5. Ion source process parameters of Hf and UV-SiO2
    No.Energy density /(J·cm-2)Damage probability /%
    17.00
    29.00
    311.00
    413.02.5
    515.030.5
    617.046.0
    719.061.5
    821.089.5
    923.0100
    1025.0100
    Table 6. Damage probability corresponding to laser with different energy densities
    Xiuhua Fu, Cheng Chen, Zhanggui Hu, Shifu Xiong, Jing Zhang, Fei Wang, Chenxin Wang. Development of Separation Film for Frequency Doubling in 278 nm All-Solid-State Laser System[J]. Chinese Journal of Lasers, 2019, 46(12): 1203002
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