• Chinese Optics Letters
  • Vol. 12, Issue s2, S22206 (2014)
Weijie Deng
Author Affiliations
  • Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
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    DOI: 10.3788/col201412.s22206 Cite this Article Set citation alerts
    Weijie Deng. Polishing silicon modification layer on silicon carbide surface by ion beam figuring[J]. Chinese Optics Letters, 2014, 12(s2): S22206 Copy Citation Text show less

    Abstract

    Silicon (Si) modification layer on silicon carbide (SiC) surface is widely used in space optical systems. To achieve high-quality optical surface, the technology of ion beam figuring (IBF) is studied. The radio frequency ion beam source is introduced briefly. Then the removal function experiment is studied. The volume removal stability of the IBF reached 97% in 10 h continuous working testing. The parameters of the IBF removal function are calculated by Gaussian fitting including the removal rate and the full-width half-maximum. Then the removal function results are used in practical fabrication. The workpiece is a plane with Si modification layer on SiC surface. After 148 min processing IBF, the final surface error reaches 1.2 nm RMS.
    Weijie Deng. Polishing silicon modification layer on silicon carbide surface by ion beam figuring[J]. Chinese Optics Letters, 2014, 12(s2): S22206
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