• Journal of Applied Optics
  • Vol. 43, Issue 4, 583 (2022)
Huilin WANG, Xiongxiong WU*, and Xiaocun JIANG
Author Affiliations
  • [in Chinese]
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    DOI: 10.5768/JAO202243.0401001 Cite this Article
    Huilin WANG, Xiongxiong WU, Xiaocun JIANG. Influence of detector pixel size on imaging performance of airborne optoelectronic system[J]. Journal of Applied Optics, 2022, 43(4): 583 Copy Citation Text show less
    Variation relationship of DRdetector with pixel size
    Fig. 1. Variation relationship of DRdetector with pixel size
    Variation relationship of SNRdetector with pixel size
    Fig. 2. Variation relationship of SNRdetector with pixel size
    Variation relationship of MTFdetector-ideal with pixel size
    Fig. 3. Variation relationship of MTFdetector-ideal with pixel size
    Variation relationship of MTFdiffusion with pixel size
    Fig. 4. Variation relationship of MTFdiffusion with pixel size
    Variation relationship of MTFdetector-actual with pixel size
    Fig. 5. Variation relationship of MTFdetector-actual with pixel size
    Relation curves between equivalent resolution REQ-SYS and Fλ/d of optical imaging system
    Fig. 6. Relation curves between equivalent resolution REQ-SYS and /d of optical imaging system
    Relation curves betweenFOMREC−ID and Fλ/d
    Fig. 7. Relation curves betweenFOMRECID and /d
    Relation curves betweenFOMREC−ID and d
    Fig. 8. Relation curves betweenFOMRECID and d
    Relation curves between system operating range andθ
    Fig. 9. Relation curves between system operating range andθ
    生产厂家型号Pixel size/μmDynamic range/dB
    日本KODAK研制的CCDKAF-83005.464.4
    KAF-40000670.2
    KAF-32007.878
    KAF-16803980
    KAF-090011284
    KAF-10012497
    美国ON Semiconductor研制的CMOSMT9F0021.465.3
    MT9J0031.6765.2
    MT9M1141.970.8
    MT9P0312.270.1
    MT9D1312.871
    MT9M1313.671
    MT9V1265.676.8
    Table 1. Multi-type CCD and CMOS parameters produced by KODAK and ON Semiconductor
    型号Pixel size/μmSNR/dB
    MT9F0021.435.5
    MT9J0031.6734
    MT9V1151.7534.1
    MT9M1141.937
    MT9P0312.238.1
    MT9D1312.842.3
    MT9T0313.243
    MT9M1313.644
    MT9M0015.245
    MT9V1265.645
    Table 2. Multi-type CMOS parameters produced by ON Semiconductor
    ERUDB-110SPECTRO-XR
    产品类型光学广域侦察监视产品双波段长焦倾斜相机凝视观瞄产品
    研制厂商Raytheon,USGoodrich,USElbit Systems / ELOP,ISRAEL
    研制年代1997-1995-19972015-
    传感器类型TVIRTVIRTVSWIRIR
    工作波段/μm0.55~0.853~50.6~0.93.4~4.20.45~0.91.2~1.73.6~4.2
    IFOV/μrad5.111.43.117.2--14.3
    面阵尺寸/pixel1024×1 024640×4806 144×128640×512Stages TDI1 920×1 0801 280×1 0241 920×1 080
    像元尺寸/μm8.9208.7524--10
    焦距/mm1 7501 7502 7941 397910970700
    光学口径/mm280280279279170170170
    F#6.256.251055.355.74.1
    Fλd0.4921.250.80.83--1.6
    Table 3. Main parameters of typical aerial imaging system
    Huilin WANG, Xiongxiong WU, Xiaocun JIANG. Influence of detector pixel size on imaging performance of airborne optoelectronic system[J]. Journal of Applied Optics, 2022, 43(4): 583
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