Author Affiliations
1College of Physics & State Key Laboratory, Qingdao University, Qingdao 26607, China2Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, Chinashow less
Fig. 1. XRD patterns of 6-, 8-, 10-, 15-, and 20-nm-thick LSMO film grown on STO (a) and LAO (b), respectively.
Fig. 2. (a) Temperature-dependent resistivity curves of LSMO films with different thicknesses, grown on (001) STO substrate; (b) ρ versus ln T curves, and (c) σ versus ln T curves derived from the data in panel (a).
Fig. 3. Temperature-dependent resistivity curves of LSMO films grown on (a) (001) LSAT and (b) (001) LAO, respectively.
Fig. 4. (a) Typical HRTEM image and (b) corresponding one-dimensional Fourier-filtered lattice image of 10-nm-thick LSMO/STO film; (c) typical HRTEM image, and (d) corresponding one-dimensional Fourier-filtered lattice image of 6-nm-thick LSMO/LAO film.
Fig. 5. Curves of temperature-dependent resistivity of 8-nm-thick LSMO films grown on (001) STO substrate under different applied magnetic fields.
Fig. 6. Curves of temperature-dependent resistivity of 8-nm-thick LSMO films grown on (011) STO substrate under different applied magnetic fields.
Fig. 7. Angular MR curves for LSMO films grown on (a) (001) STO substrate and (b) (001) LSAT substrate at 2 K and 8 T, respectively.
Fig. 8. Angular MR curves for LSMO films grown on (a) (001) STO, (b) (011) STO, (c) (001) LSAT, and (d) (011) LSAT, respectively.
Fig. 9. Magnetic hysteresis loops of LSMO films with different substrate orientations at 10 K. The unit 1 Oe = 79.5775 A⋅m−1.